M. Reza Ghazanfari, Simon Steinberg, Konrad Siemensmeyer, Johannes C. Vrijmoed, Mirko Tallu, Stefanie Dehnen, Günther Thiele
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引用次数: 0
摘要
新型硫代钴酸钾 K2[Co3S4]在层状阴离子亚晶格中的钴位有 25% 的空位。阻抗和介电研究表明,该物质在室温下的离子电导率高达 21.4 mS cm-1,是迄今所报道的钾离子电导率的最高值,在 1 kHz 时的电导率也高达 2650。磁力测量结果表明,在 3 K 和 20 K 时,钾离子具有反铁磁性结构,其内在交换偏置场分别为 0.432 T 和 0.161 T,这可能是磁性阴离子亚晶格和非磁性阳离子亚晶格的界面效应以及部分自旋悬臂效应共同作用的结果。交换偏压行为的稳定性通过 10 次磁滞循环后小于 18% 的训练效应得到了证实。通过实验和理论测定,该材料的半导体带隙能为 1.68 eV。这些发现使这种材料成为钾离子电池活性电极材料和自旋电子应用的理想候选材料。
Insights into a Defective Potassium Sulfido Cobaltate: Giant Magnetic Exchange Bias, Ionic Conductivity, and Electrical Permittivity
The novel potassium sulfido cobaltate, K2[Co3S4] is introduced, with 25% vacancies of the cobalt positions within a layered anionic sublattice. The impedance and dielectric investigations indicate a remarkable ionic conductivity of 21.4 mS cm−1 at room temperature, which is in the range of highest ever reported values for potassium-ions, as well as a high electrical permittivity of 2650 at 1 kHz, respectively. Magnetometry results indicate an antiferromagnetic structure with giant intrinsic exchange bias fields of 0.432 and 0.161 T at 3 and 20 K respectively, potentially induced by a combination of the interfacial effect of combined magnetic anionic and nonmagnetic cationic sublattices, as well as partial spin canting. The stability of the exchange bias behavior is confirmed by a training effect of less than 18% upon 10 hysteresis cycles. The semiconductivity of the material is determined, both experimentally and theoretically, with a bandgap energy of 1.68 eV. The findings render this material as a promising candidate for both, active electrode material in potassium-ion batteries, and for spintronic applications.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.