基于铜和碳纳米管的 TSV-Bump-RDL 的电气建模和性能分析

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shivangi Chandrakar;Kamal Solanki;Deepika Gupta;Manoj Kumar Majumder
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引用次数: 0

摘要

采用可行的凸点形状对 3D 集成电路的功能有重大影响。圆柱形凸点结构被认为是最常见的形状之一,但却面临着严重的延迟、功率损耗和串扰挑战。最近,基于锥形 TSV 凸块的结构因其超低的体积分数和耦合度而备受瞩目,从而大大缓解了延迟和串扰问题。针对圆柱形、桶形、沙漏形和锥形凸块结构以及耦合、钝化和边缘对再分布层(RDL)的影响,已经完成了电气 RLGC 建模。为了验证所提出的 TSV 凸块结构,将通孔的定量值与电磁和实验结果进行了比较,并对传播延迟、功率耗散、峰值噪声、插入损耗和反射损耗进行了后续研究。所提出的通孔凸点结构与实验结果非常一致,平均偏差仅为 3.51%。此外,还采用了有限差分时域(FDTD)电磁计算来进一步检验性能特征。此外,值得强调的是,锥形凸点结构能有效降低传播延迟、功率耗散、峰值噪声、插入损耗和反射损耗,与桶状、圆柱形和沙漏形凸点相比,平均偏差分别为 34.83%、28.62%、29.98%、13.57% 和 41.06%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical Modeling and Performance Analysis of Cu and CNT Based TSV-Bump-RDL
The adoption of a feasible bump shape exerts a significant impact on the functionality of a 3D IC. The cylindrical bump structure, considered among the most prevalent shape, endures significant delay, power loss and crosstalk challenges. The tapered based TSV-bump structure recently acquired prominence due to their ultra-low fraction of volume and coupling, resulting in significant alleviation of delay and crosstalk issues. The electrical RLGC modeling has been accomplished for cylindrical, barrel, hourglass and the tapered bump structures along with the impact of coupling, passivation and fringing on the redistribution layer (RDL). In order to validate the proposed TSV bump structure, the quantitative values of a via is compared against the EM and experimental results, and a subsequent investigation have been accomplished for the propagation delay, power dissipation, peak noise, insertion and reflection losses. The proposed via bump structure is remarkable consistence with the experimental results with an average deviation of only 3.51%. In addition, the Finite difference time-domain (FDTD) electromagnetic computation is employed to further examine the performance characteristics. Furthermore, it is worth emphasizing that the tapered bump structure can effectively reduce the propagation delay, power dissipation, peak noise, insertion and reflection losses with an average deviation of 34.83%, 28.62%, 29.98%, 13.57%, and 41.06%, respectively, when compared to the barrel, cylindrical and hourglass bumps.
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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