优化钴基 CBRAM 中的开关层，在低于 100 µA 的条件下实现 >105 内存窗口

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-06-06 DOI:10.1016/j.sse.2024.108964

Yongjun Cho , Bo Soo Kang , Pankaj Kumbhare , Romain Delhougne , Laura Nyns , Ming Mao , Ludovic Goux , Gouri Sankar Kar , Attilio Belmonte

{"title":"优化钴基 CBRAM 中的开关层，在低于 100 µA 的条件下实现 >105 内存窗口","authors":"Yongjun Cho , Bo Soo Kang , Pankaj Kumbhare , Romain Delhougne , Laura Nyns , Ming Mao , Ludovic Goux , Gouri Sankar Kar , Attilio Belmonte","doi":"10.1016/j.sse.2024.108964","DOIUrl":null,"url":null,"abstract":"<div><p>Co/HfO<sub>2</sub>-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO<sub>2</sub> thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 10<sup>5</sup>.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"219 ","pages":"Article 108964"},"PeriodicalIF":1.4000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime\",\"authors\":\"Yongjun Cho , Bo Soo Kang , Pankaj Kumbhare , Romain Delhougne , Laura Nyns , Ming Mao , Ludovic Goux , Gouri Sankar Kar , Attilio Belmonte\",\"doi\":\"10.1016/j.sse.2024.108964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Co/HfO<sub>2</sub>-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO<sub>2</sub> thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 10<sup>5</sup>.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"219 \",\"pages\":\"Article 108964\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001138\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001138","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

我们对基于 Co/HfO2 的 CBRAM 堆栈进行了优化，以扩大存储器窗口，实现低电流（50 µA）运行。首先，我们在开关层中掺入硅，以降低原始电流，从而扩大存储器窗口。然后，我们通过增加硅掺杂 HfO2 的厚度来降低成型电压。最后，我们通过引入吸湿性氧化物 LaSiO 和 HfSiO 来增强钴离子通过羟基的跳跃，从而延长了耐用寿命并缩短了写入时间。我们进一步概述了吸湿层相对于 Co 活性电极的位置在将 CBRAM 器件的存储窗口扩大到 105 方面的重要作用。

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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime

Co/HfO₂-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO₂ thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 10⁵.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.