Hong Wu , Yue Wang , Yi Liu , Xuan Li , Runtian Li , Yufei Li
{"title":"基于改进诊断指数的模块化多电平转换器 IGBT 开路故障诊断策略","authors":"Hong Wu , Yue Wang , Yi Liu , Xuan Li , Runtian Li , Yufei Li","doi":"10.1016/j.microrel.2024.115444","DOIUrl":null,"url":null,"abstract":"<div><p>Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"159 ","pages":"Article 115444"},"PeriodicalIF":1.6000,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A diagnostic strategy for IGBT open-circuit faults in modular multilevel converters based on improved diagnostic indices\",\"authors\":\"Hong Wu , Yue Wang , Yi Liu , Xuan Li , Runtian Li , Yufei Li\",\"doi\":\"10.1016/j.microrel.2024.115444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"159 \",\"pages\":\"Article 115444\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424001240\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001240","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A diagnostic strategy for IGBT open-circuit faults in modular multilevel converters based on improved diagnostic indices
Capacitor voltage deviations between two submodules (SMs) are always used as the diagnostic index for the insulated gate bipolar transistor (IGBT) open-circuit fault diagnosis in modular multilevel converters (MMCs). However, it is difficult to determine when MMCs operate in different conditions. To solve this issue, this article proposes a diagnostic strategy for IGBT open-circuit faults in MMCs based on improved diagnostic indices. First, two diagnostic indices, i.e., the concept of the count of periods during which the switching function is fixed (CSF) and capacitor voltage sorting sequence number (CSN) are proposed. On this basis, fault detection is implemented by judging the changing trend of the CSN in the SM whose CSF is the highest. The remaining malfunctioning SMs are located in turns by a similar process to fault detection. The proposed diagnostic indices show consistent faulty characteristics under different operating conditions, thus avoiding readjusting the threshold according to different operating conditions. In this sense, the proposed strategy can be easily used and promoted in different operating scenarios. Experimental results in a hardware-in-the-loop (HIL) platform verify the effectiveness of the proposed strategy.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.