考虑材料老化和功率损耗的新型电动汽车薄膜电容器寿命估算方法和结构优化设计

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-03-31 DOI:10.1109/TDMR.2024.3407855

Kaining Kuang;Xinhua Guo;Chunzhen Li;Xiuwan Li

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引用次数: 0

摘要

薄膜电容器被广泛应用于电动汽车（EV）控制器中，以减少纹波电流对电池和转换器的不利影响。但薄膜电容器的工作温度上限相对较低。电动汽车中的环境温度过高会导致薄膜电容器过早失效，从而影响控制器的可靠性。因此，提出相应的电容器寿命预测方法是一个紧迫的问题。本文分析了薄膜电容器的累积损伤和退化过程，并提出了一种预测其使用寿命的方法，该方法考虑了 ESR、热传导率和内部损耗的变化。本文以一个价值 440 美元的 F 薄膜电容器组为例进行了分析。此外，还基于有限元建模（FEM）分析了优化电容器结构以延长电容器寿命的有效性，并采用蒙特卡罗方法考虑了制造公差对薄膜电容器可靠性的影响。分析结果表明，与原始电容器相比，优化电容器的 B10 寿命可延长 54.11%。

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A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses

Film capacitors are widely used in electric vehicles (EVs) controllers to reduce the adverse effects of ripple current on batteries and converters. But the upper limit of the working temperature for film capacitors is relatively low. High ambient temperatures in EVs can lead to premature failure of film capacitors, thereby impacting the reliability of the controllers. Therefore, proposing a corresponding capacitor lifetime prediction method is a burning issue. This paper analyzes the accumulation of damage and degradation processes in film capacitors and proposes a method to predict their lifetime, which accounts for changes in ESR, thermal conductivity, and internal losses. An analysis on a

$440\mu $

F film capacitor bank is performed using this method as an example. In addition, the effectiveness of optimizing the capacitor structure to extend capacitor lifetime is analyzed based on finite element modeling (FEM), and the Monte Carlo method is employed to consider the influence of manufacturing tolerances on the reliability of film capacitors. The analysis results indicate that, compared to the original capacitor, the B10 life of the optimized capacitor can be extended by 54.11%.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.