W 波段双向 6 位有源移相器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-03-09 DOI:10.1109/LSSC.2024.3398779

Kateryna Smirnova;Mark van der Heijden;Domine Leenaerts;Ahmet Çağrı Ulusoy

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引用次数: 0

摘要

本文提出了一种分辨率为 6 位的新型 W 波段无开关双向有源移相器。该电路采用 SiGe:C BiCMOS 技术实现，使用 Gilbert-cell 内核，其配置方式结合了无源移相器的互易性和有源拓扑结构的紧凑性。该电路在两个方向上的最大平均增益分别为 -7.4 和 -8.2 dB，同时在 85-100 GHz 范围内保持有效值振幅和相位误差分别低于 0.84 dB 和 3.4°。该移相器的集成电路面积为 0.04 mm2，在 2.4 V 电源电压下，每个方向的直流功率为 38 mW（不包括相位控制电路）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bidirectional 6-Bit Active Phase Shifter in W-Band

In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of –7.4 and –8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85– 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量