散装载体污染及其对能量收集系统下 MOSFET 的影响

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-21 DOI:10.1109/JEDS.2024.3403649

Yuta Watanabe;Takaya Sugiura;Nobuhiko Nakano

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引用次数: 0

摘要

能量收集器（如光伏电池）会在深层衬底区域产生载流子；这些载流子会影响 MOSFET，使其性能下降，甚至导致故障。在这项研究中，我们以能量收集器件为背景，讨论了块状载流子污染对集成 MOSFET 的影响。我们证实，光伏电池中 MOSFET 电路的紧密集成会在强光照射下导致故障。此外，数值模拟显示，PMOS 对载流子污染高度敏感，因为它是从体侧存储载流子进入 NWell 区域的正向 pn 结。此外，增大与照明窗口的距离并不是有效的应对措施，在进行此类大规模集成时应采用其他方法，如硅绝缘体衬底、n-衬底或 NMOS 逻辑。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems

Energy harvesters, such as photovoltaic cells, generate carriers in the deep substrate regions; these carriers can affect MOSFETs and deteriorate their performance or even cause malfunctioning. In this study, we discussed the effects of bulk carrier contamination on integrated MOSFETs in the context of energy-harvesting devices. We confirmed that the close integration of MOSFET circuits in a photovoltaic cell causes malfunctioning under strong light illumination. Moreover, numerical simulations revealed that PMOS is highly sensitive to carrier contamination as a forward pn-junction from the bulk-side storage carriers into the NWell region. Furthermore, increasing the distance from the illumination window was not an effective countermeasure, and alternative methods, such as the silicon-on-insulator substrate, n−-substrate, or NMOS logic, should be implemented for such large-scale integration.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.