{"title":"用于存储器和新兴应用的铁电 FDSOI FET 的温度和变异感知紧凑建模","authors":"Swetaki Chatterjee , Shubham Kumar , Amol Gaidhane , Chetan Kumar Dabhi , Yogesh Singh Chauhan , Hussam Amrouch","doi":"10.1016/j.sse.2024.108954","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper, we present a temperature and variability-aware Verilog-A-based compact model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric materials and the important electrical characteristics, such as the history effect, the impact of pulse width and amplitude on threshold voltage, and temperature-dependent degradation of polarization. The impact of variability is also explored regarding reliable operation of the FeFET. The developed model is robust and can accurately capture the experimentally observed trends, such as the change in polarization due to temperature, increased memory window on reading from the back-gate, etc. Further, we discuss two applications of our developed model viz. (a) multi-level-cell storage and (b) FeFET-based array for MAC operations. The designs are tested using the proposed model in commercial SPICE simulator at different temperatures including the effect of variation. Analysis presented in this article reveals that variability and temperature can be detrimental for operation of FeFET-based systems.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications\",\"authors\":\"Swetaki Chatterjee , Shubham Kumar , Amol Gaidhane , Chetan Kumar Dabhi , Yogesh Singh Chauhan , Hussam Amrouch\",\"doi\":\"10.1016/j.sse.2024.108954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper, we present a temperature and variability-aware Verilog-A-based compact model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric materials and the important electrical characteristics, such as the history effect, the impact of pulse width and amplitude on threshold voltage, and temperature-dependent degradation of polarization. The impact of variability is also explored regarding reliable operation of the FeFET. The developed model is robust and can accurately capture the experimentally observed trends, such as the change in polarization due to temperature, increased memory window on reading from the back-gate, etc. Further, we discuss two applications of our developed model viz. (a) multi-level-cell storage and (b) FeFET-based array for MAC operations. The designs are tested using the proposed model in commercial SPICE simulator at different temperatures including the effect of variation. Analysis presented in this article reveals that variability and temperature can be detrimental for operation of FeFET-based systems.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001035\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001035","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications
In this paper, we present a temperature and variability-aware Verilog-A-based compact model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric materials and the important electrical characteristics, such as the history effect, the impact of pulse width and amplitude on threshold voltage, and temperature-dependent degradation of polarization. The impact of variability is also explored regarding reliable operation of the FeFET. The developed model is robust and can accurately capture the experimentally observed trends, such as the change in polarization due to temperature, increased memory window on reading from the back-gate, etc. Further, we discuss two applications of our developed model viz. (a) multi-level-cell storage and (b) FeFET-based array for MAC operations. The designs are tested using the proposed model in commercial SPICE simulator at different temperatures including the effect of variation. Analysis presented in this article reveals that variability and temperature can be detrimental for operation of FeFET-based systems.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.