用于存储器和新兴应用的铁电 FDSOI FET 的温度和变异感知紧凑建模

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Swetaki Chatterjee , Shubham Kumar , Amol Gaidhane , Chetan Kumar Dabhi , Yogesh Singh Chauhan , Hussam Amrouch
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引用次数: 0

摘要

本文介绍了一种基于温度和变异性感知 Verilog-A 的紧凑型模型,用于模拟铁电 FET。该模型捕捉了铁电材料丰富的物理特性和重要的电气特性,如历史效应、脉冲宽度和振幅对阈值电压的影响以及随温度变化的极化退化。此外,还探讨了可变性对铁电晶体管可靠运行的影响。所开发的模型非常稳健,能准确捕捉实验观察到的趋势,如温度导致的极化变化、从后栅极读取数据时内存窗口的增加等。此外,我们还讨论了所开发模型的两个应用,即 (a) 多层电池存储和 (b) 基于 FeFET 的 MAC 操作阵列。我们在商用 SPICE 仿真器中使用所提出的模型在不同温度下对这些设计进行了测试,其中包括变化的影响。本文的分析表明,变化和温度会对基于场效应晶体管的系统的运行产生不利影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications

In this paper, we present a temperature and variability-aware Verilog-A-based compact model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric materials and the important electrical characteristics, such as the history effect, the impact of pulse width and amplitude on threshold voltage, and temperature-dependent degradation of polarization. The impact of variability is also explored regarding reliable operation of the FeFET. The developed model is robust and can accurately capture the experimentally observed trends, such as the change in polarization due to temperature, increased memory window on reading from the back-gate, etc. Further, we discuss two applications of our developed model viz. (a) multi-level-cell storage and (b) FeFET-based array for MAC operations. The designs are tested using the proposed model in commercial SPICE simulator at different temperatures including the effect of variation. Analysis presented in this article reveals that variability and temperature can be detrimental for operation of FeFET-based systems.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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