{"title":"迟滞环对 PEDOT:PSS/ZnO 纳米棒/ZnO:Ga 异质结构的电压-电流特性和光学响应的影响","authors":"Tomoaki Terasako , Masakazu Yagi , Tetsuya Yamamoto","doi":"10.1016/j.sse.2024.108955","DOIUrl":null,"url":null,"abstract":"<div><p>Volage (<em>V</em>)-current (<em>I</em>) curves of the poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/ZnO nanorods (NRs)/ZnO:Ga (GZO) heterostructure exhibited a rectification behavior with hysteresis loops both in forward voltage (<em>V</em><sub>F</sub>) and reverse voltage (<em>V</em><sub>R</sub>) regions. The ultraviolet (UV) light irradiation of 360 nm led to the increase in the reverse current (<em>I</em><sub>R</sub>), i.e. generation of photocurrent (PC), and the decrease in the hysteresis loop area in the <em>V</em><sub>F</sub> region. In dark, the 1/<em>V</em> vs. ln (<em>I</em>/<em>V</em><sup>2</sup>) plot revealed that the dominant carrier transport mechanisms in the low- and the high-<em>V</em><sub>F</sub> regions are the direct tunneling and the Fowler-Nordheim (F-N) tunneling through the dipole layer formed at the interface between the PEDOT:PSS and ZnO NRs layers, respectively. On the contrary, the carrier transport in the middle-<em>V</em><sub>F</sub> region in dark was dominated by the bulk-limited mechanisms, such as the space-charge-limited (SCL) conduction controlled by the single shallow traps, the trap-free SCL conduction, and the trap-filled-limit conduction controlled by the traps with Gaussian distribution. The UV light irradiation changed the carrier transport mechanism in the middle-<em>V</em><sub>F</sub> region to the trap-free SCL conduction. The resistive switching related to the hysteresis loop was found to be caused by the trapping and detrapping of the injected carriers at the traps. In dark, the maximum forward current was increased by the repetition of the <em>V</em><sub>F</sub> sweep of 0 V → 5 V → 0 V, but decreased by the repetition of the <em>V</em><sub>R</sub> sweep of 0 V → -5V → 0 V, indicating the possibility of the resistive memory. At the low <em>V</em><sub>R</sub>s, PC spectra showed a main peak at 350 nm, which is corresponding to slightly higher photon energy than the bandgap energy of ZnO. Moreover, the existence of the tail extending into the bandgap was also observed on the PC spectra. From the time response of PC, the depth of the trap state was estimated to be 0.64–0.77 eV.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"217 ","pages":"Article 108955"},"PeriodicalIF":1.4000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hysteresis loops on voltage-current characteristics and optical responses of PEDOT:PSS/ZnO nanorods/ZnO:Ga heterostructure\",\"authors\":\"Tomoaki Terasako , Masakazu Yagi , Tetsuya Yamamoto\",\"doi\":\"10.1016/j.sse.2024.108955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Volage (<em>V</em>)-current (<em>I</em>) curves of the poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/ZnO nanorods (NRs)/ZnO:Ga (GZO) heterostructure exhibited a rectification behavior with hysteresis loops both in forward voltage (<em>V</em><sub>F</sub>) and reverse voltage (<em>V</em><sub>R</sub>) regions. The ultraviolet (UV) light irradiation of 360 nm led to the increase in the reverse current (<em>I</em><sub>R</sub>), i.e. generation of photocurrent (PC), and the decrease in the hysteresis loop area in the <em>V</em><sub>F</sub> region. In dark, the 1/<em>V</em> vs. ln (<em>I</em>/<em>V</em><sup>2</sup>) plot revealed that the dominant carrier transport mechanisms in the low- and the high-<em>V</em><sub>F</sub> regions are the direct tunneling and the Fowler-Nordheim (F-N) tunneling through the dipole layer formed at the interface between the PEDOT:PSS and ZnO NRs layers, respectively. On the contrary, the carrier transport in the middle-<em>V</em><sub>F</sub> region in dark was dominated by the bulk-limited mechanisms, such as the space-charge-limited (SCL) conduction controlled by the single shallow traps, the trap-free SCL conduction, and the trap-filled-limit conduction controlled by the traps with Gaussian distribution. The UV light irradiation changed the carrier transport mechanism in the middle-<em>V</em><sub>F</sub> region to the trap-free SCL conduction. The resistive switching related to the hysteresis loop was found to be caused by the trapping and detrapping of the injected carriers at the traps. In dark, the maximum forward current was increased by the repetition of the <em>V</em><sub>F</sub> sweep of 0 V → 5 V → 0 V, but decreased by the repetition of the <em>V</em><sub>R</sub> sweep of 0 V → -5V → 0 V, indicating the possibility of the resistive memory. At the low <em>V</em><sub>R</sub>s, PC spectra showed a main peak at 350 nm, which is corresponding to slightly higher photon energy than the bandgap energy of ZnO. Moreover, the existence of the tail extending into the bandgap was also observed on the PC spectra. From the time response of PC, the depth of the trap state was estimated to be 0.64–0.77 eV.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"217 \",\"pages\":\"Article 108955\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001047\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001047","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
聚（3,4-亚乙二氧基噻吩）聚苯乙烯磺酸盐（PEDOT:PSS）/氧化锌纳米棒（NRs）/氧化锌：镓（GZO）异质结构的电压（V）-电流（I）曲线在正向电压（VF）和反向电压（VR）区域均表现出具有滞后环的整流行为。在 360 纳米紫外线（UV）照射下，反向电流（IR）增加，即产生光电流（PC），而正向电压（VF）区的磁滞环面积减小。在暗处，1/V vs. ln (I/V2) 图显示，低 VF 区和高 VF 区的主要载流子传输机制分别是通过 PEDOT:PSS 层和 ZnO NRs 层界面上形成的偶极层的直接隧穿和 Fowler-Nordheim (F-N) 隧穿。相反，暗态下中VF区的载流子输运则由体层限制机制主导，例如由单个浅陷阱控制的空间电荷限制（SCL）传导、无陷阱SCL传导以及由具有高斯分布的陷阱控制的陷阱填充限制传导。紫外光照射改变了中间-VF 区的载流子传输机制，使其变为无阱 SCL 传导。研究发现，与滞后环有关的电阻开关是由注入载流子在陷阱处的捕获和分离引起的。在暗处，最大正向电流随着 0 V → 5 V → 0 V 的 VF 扫频的重复而增大，但随着 0 V → -5V → 0 V 的 VR 扫频的重复而减小，这表明存在电阻记忆的可能性。在低 VR 条件下，PC 光谱在 350 nm 处显示出一个主峰，其对应的光子能量略高于 ZnO 的带隙能量。此外，在 PC 光谱上还观察到延伸到带隙的尾部。从 PC 的时间响应来看，陷阱态的深度估计为 0.64-0.77 eV。
Hysteresis loops on voltage-current characteristics and optical responses of PEDOT:PSS/ZnO nanorods/ZnO:Ga heterostructure
Volage (V)-current (I) curves of the poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/ZnO nanorods (NRs)/ZnO:Ga (GZO) heterostructure exhibited a rectification behavior with hysteresis loops both in forward voltage (VF) and reverse voltage (VR) regions. The ultraviolet (UV) light irradiation of 360 nm led to the increase in the reverse current (IR), i.e. generation of photocurrent (PC), and the decrease in the hysteresis loop area in the VF region. In dark, the 1/V vs. ln (I/V2) plot revealed that the dominant carrier transport mechanisms in the low- and the high-VF regions are the direct tunneling and the Fowler-Nordheim (F-N) tunneling through the dipole layer formed at the interface between the PEDOT:PSS and ZnO NRs layers, respectively. On the contrary, the carrier transport in the middle-VF region in dark was dominated by the bulk-limited mechanisms, such as the space-charge-limited (SCL) conduction controlled by the single shallow traps, the trap-free SCL conduction, and the trap-filled-limit conduction controlled by the traps with Gaussian distribution. The UV light irradiation changed the carrier transport mechanism in the middle-VF region to the trap-free SCL conduction. The resistive switching related to the hysteresis loop was found to be caused by the trapping and detrapping of the injected carriers at the traps. In dark, the maximum forward current was increased by the repetition of the VF sweep of 0 V → 5 V → 0 V, but decreased by the repetition of the VR sweep of 0 V → -5V → 0 V, indicating the possibility of the resistive memory. At the low VRs, PC spectra showed a main peak at 350 nm, which is corresponding to slightly higher photon energy than the bandgap energy of ZnO. Moreover, the existence of the tail extending into the bandgap was also observed on the PC spectra. From the time response of PC, the depth of the trap state was estimated to be 0.64–0.77 eV.
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