Taehoon Park, Seokho Seo, Yujin Kim, See-On Park, Soobin Choi, Seokman Hong, Hakcheon Jeong, Shinhyun Choi
{"title":"基于具有阶跃势垒的充电存储结 FET 的超低功耗可靠动态 Memtransistor,适用于高能效边缘计算框架","authors":"Taehoon Park, Seokho Seo, Yujin Kim, See-On Park, Soobin Choi, Seokman Hong, Hakcheon Jeong, Shinhyun Choi","doi":"10.1002/aelm.202300904","DOIUrl":null,"url":null,"abstract":"<p>The emergence of technologies such as Artificial Intelligence (AI) and the Internet of Things (IoT) has ushered in the era of big data. The demand for low-power hardware systems and efficient algorithms has become more imperative. In this study, an ultra-low-power dynamic memtransistor based on the charge storage junction Field-Effect Transistor (FET) with a step-wise potential barrier is developed. A simple yet efficient device structure allows for analog programming and spontaneous relaxation. The device demonstrated fast speed (tens of nanoseconds (ns)) and low current (in picoamperes (pA)), resulting in ultra-low programming power (in attojoules (aJ)). Furthermore, the device exhibited high reliability, with a 0.4% cycle-to-cycle variation and endurance over 10<sup>7</sup> pulses, owing to its non-structural destructive operation process. An operation scheme is developed that enables read on/off and program/inhibition mode for 2T (1 memtransistor-1 selecting transistor) array. The capability to distinguish temporal data using the device's spontaneous relaxation characteristics is demonstrated. A reservoir computing (RC) system framework is constructed using simulation and verified that the dynamic memtransistor can extract features efficiently from a hand-written digit dataset. It is anticipated that the developed dynamic memtransistor, with its distinctive temporal characteristics, will play a pivotal role in developing a novel low-power computing framework.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202300904","citationCount":"0","resultStr":"{\"title\":\"Ultra-Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step-Wise Potential Barrier for Energy-Efficient Edge Computing Framework\",\"authors\":\"Taehoon Park, Seokho Seo, Yujin Kim, See-On Park, Soobin Choi, Seokman Hong, Hakcheon Jeong, Shinhyun Choi\",\"doi\":\"10.1002/aelm.202300904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The emergence of technologies such as Artificial Intelligence (AI) and the Internet of Things (IoT) has ushered in the era of big data. The demand for low-power hardware systems and efficient algorithms has become more imperative. In this study, an ultra-low-power dynamic memtransistor based on the charge storage junction Field-Effect Transistor (FET) with a step-wise potential barrier is developed. A simple yet efficient device structure allows for analog programming and spontaneous relaxation. The device demonstrated fast speed (tens of nanoseconds (ns)) and low current (in picoamperes (pA)), resulting in ultra-low programming power (in attojoules (aJ)). Furthermore, the device exhibited high reliability, with a 0.4% cycle-to-cycle variation and endurance over 10<sup>7</sup> pulses, owing to its non-structural destructive operation process. An operation scheme is developed that enables read on/off and program/inhibition mode for 2T (1 memtransistor-1 selecting transistor) array. The capability to distinguish temporal data using the device's spontaneous relaxation characteristics is demonstrated. A reservoir computing (RC) system framework is constructed using simulation and verified that the dynamic memtransistor can extract features efficiently from a hand-written digit dataset. It is anticipated that the developed dynamic memtransistor, with its distinctive temporal characteristics, will play a pivotal role in developing a novel low-power computing framework.</p>\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202300904\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202300904\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202300904","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ultra-Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step-Wise Potential Barrier for Energy-Efficient Edge Computing Framework
The emergence of technologies such as Artificial Intelligence (AI) and the Internet of Things (IoT) has ushered in the era of big data. The demand for low-power hardware systems and efficient algorithms has become more imperative. In this study, an ultra-low-power dynamic memtransistor based on the charge storage junction Field-Effect Transistor (FET) with a step-wise potential barrier is developed. A simple yet efficient device structure allows for analog programming and spontaneous relaxation. The device demonstrated fast speed (tens of nanoseconds (ns)) and low current (in picoamperes (pA)), resulting in ultra-low programming power (in attojoules (aJ)). Furthermore, the device exhibited high reliability, with a 0.4% cycle-to-cycle variation and endurance over 107 pulses, owing to its non-structural destructive operation process. An operation scheme is developed that enables read on/off and program/inhibition mode for 2T (1 memtransistor-1 selecting transistor) array. The capability to distinguish temporal data using the device's spontaneous relaxation characteristics is demonstrated. A reservoir computing (RC) system framework is constructed using simulation and verified that the dynamic memtransistor can extract features efficiently from a hand-written digit dataset. It is anticipated that the developed dynamic memtransistor, with its distinctive temporal characteristics, will play a pivotal role in developing a novel low-power computing framework.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.