模拟 VCSEL 的偏振分辨光谱

Q4 Engineering

Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600498

E. A. Dedkov, V. L. Kurochkin, V. N. Chizhevsky, M. V. Lahmitski, S. Ya. Kilin, R. A. Shakhovoy

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引用次数: 0

摘要

摘要我们提出了一种基于广泛使用的 SFM 模型随机版本模拟 VCSEL 光谱的新方法[1]。与现有结果[2]相比，我们的方法不仅提供了激光尖峰的波长和相对线宽，还提供了全光谱。我们的研究表明，它能捕捉到所有已知的特征，如偏振切换[3]、四波混合（FWM）尖峰[4]和弛豫振荡[5]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Simulation of the Polarization-Resolved Spectra of VCSEL

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Simulation of the Polarization-Resolved Spectra of VCSEL

Abstract

We present a new view at simulating the VCSEL spectrum based on stochastic version of the widely used SFM model [1]. In comparison to the existing results [2], our method provides not only wavelengths and relative linewidths of lasing spikes but also the full spectrum. We show that it captures all known features such as polarization switching [3], four-wave-mixing (FWM) spike [4], and relaxation oscillations [5].

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.