发射极超晶格双极晶体管中的电子传输

Q4 Engineering

Russian Microelectronics Pub Date : 2024-05-04 DOI:10.1134/s1063739723600334

O. L. Golikov, I. Yu. Zabavichev, A. S. Ivanov, S. V. Obolensky, E. S. Obolenskaya, D. G. Paveliev, A. A. Potekhin, A. S. Puzanov, E. A. Tarasova, S. V. Khazanova

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引用次数: 0

摘要

摘要计算了在发射区具有短周期超晶格的双极晶体管的一组传输和输出电流电压特性。结果表明，晶体管结构中超晶格的存在会导致负差分电导区的形成，从而不仅能实现放大，还能产生和倍增高频振荡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Abstract

A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.