{"title":"栅极可控石墨烯/五碳烯肖特基结的电可调理想因子和串联电阻","authors":"Tae Yoon Lee;Yoon-Jeong Kim;Seokhoon Ahn;Dae-Young Jeon","doi":"10.1109/JEDS.2024.3397014","DOIUrl":null,"url":null,"abstract":"Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10520713","citationCount":"0","resultStr":"{\"title\":\"Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions\",\"authors\":\"Tae Yoon Lee;Yoon-Jeong Kim;Seokhoon Ahn;Dae-Young Jeon\",\"doi\":\"10.1109/JEDS.2024.3397014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10520713\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10520713/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10520713/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.