通过集成 FeFET 和 NbOx Mott Memristor 实现 1T1M 可编程人工尖峰神经元

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-03-06 DOI:10.1109/LED.2024.3395024

Shujing Zhao;Chuan Yu Han;Fengbin Tian;Yubin Yuan;Junshuai Chai;Hao Xu;Shiquan Fan;Xin Li;Weihua Liu;Can Li;Wing Man Tang;P. T. Lai;Xiaodong Huang;Guohe Zhang;Li Geng;Xiaolei Wang

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引用次数: 0

摘要

在这项研究中，我们提出了一种一晶体管一忆苦思甜器（1T1M）可编程人工尖峰神经元，它是通过集成 Hf0.5 Zr0.5 O2 铁电晶体管（FeFET）和 NbOx Mott 忆苦思甜器实现的。FeFET 的阈值电压可通过栅极写入脉冲（${V}_{textit {pulse}}$）进行配置，具有出色的保持特性，能够在多种状态下存储数据。同时，NbOx Mott Memristor 具有阈值切换和高稳定性的特点，由 FeFET 驱动，可以产生与 FeFET 存储状态相对应的不同尖峰速率。因此，可编程人工尖峰神经元得以实现，其状态由 ${V}_{textit {pulse}}$ 精确配置，以准确传输编码的神经形态尖峰。这一成果为开发尖峰神经网络（SNN）奠定了基础。

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A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor

In this study, we present a one-transistor-one-memristor (1T1M) programmable artificial spiking neuron, achieved through the integration of a Hf0.5 Zr0.5 O2 ferroelectric transistor (FeFET) and a NbOx Mott memristor. The FeFET’s threshold voltage, configurable by a gate write pulse (

${V}_{\textit {pulse}}$

), exhibits excellent retention properties, enabling the storage of data in multiple states. Simultaneously, the NbOx Mott memristor, characterized by threshold switching and high stability, is driven by the FeFET, allowing for the generation of diverse spike rates corresponding to the storage states of the FeFET. Consequently, a programmable artificial spiking neuron is realized, with its states precisely configured by

${V}_{\textit {pulse}}$

to accurately transmit the encoded neuromorphic spikes. This achievement lays the groundwork for the development of spiking neural networks (SNNs).

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.