Zhengfeng Huang , Lei Ai , Xinyu Jiang , Zhouyu Gong , Xiaolei Wang , Yingchun Lu , Tai Song , Yiming Ouyang , Aibin Yan
{"title":"低功耗抗 TNU 加固闩锁设计","authors":"Zhengfeng Huang , Lei Ai , Xinyu Jiang , Zhouyu Gong , Xiaolei Wang , Yingchun Lu , Tai Song , Yiming Ouyang , Aibin Yan","doi":"10.1016/j.microrel.2024.115417","DOIUrl":null,"url":null,"abstract":"<div><p>Technology scaling of integrated circuits into nanoscale feature sizes has decreased the effectiveness of existing single-node-upset and double-node-upset hardening techniques in harsh radiation environments. This paper proposes a low-power triple-node-upset resilient latch (LP-TNU) based on approximate C-elements and cross-interlocking structure. The proposed LP-TNU achieves TNU resilience based on the filtering feature of C-elements and redundant feedback structure. Extensive simulation results demonstrate the robustness of the proposed latch. The proposed LP-TNU achieves extremely low power consumption because of the clock-gating technique and fewer transistors. Compared with reference latches, the proposed latch is the most robust with the lowest power consumption and power-delay-product. In addition, compared with TNU-resilient latches such as DNUHL, LCTNURL, TNURL, HLTNURL and TNUSH, the proposed LP-TNU achieves a 62.68 % reduction on average in power consumption, 9.54 % reduction on average in delay, 20.75 % reduction on average in area overhead, 69.98 % reduction on average in the area-power-delay product. At the same time, the proposed latch is insensitive to variations of the process, supply voltage, and working temperature.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"157 ","pages":"Article 115417"},"PeriodicalIF":1.6000,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A low power TNU-resilient hardened latch design\",\"authors\":\"Zhengfeng Huang , Lei Ai , Xinyu Jiang , Zhouyu Gong , Xiaolei Wang , Yingchun Lu , Tai Song , Yiming Ouyang , Aibin Yan\",\"doi\":\"10.1016/j.microrel.2024.115417\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Technology scaling of integrated circuits into nanoscale feature sizes has decreased the effectiveness of existing single-node-upset and double-node-upset hardening techniques in harsh radiation environments. This paper proposes a low-power triple-node-upset resilient latch (LP-TNU) based on approximate C-elements and cross-interlocking structure. The proposed LP-TNU achieves TNU resilience based on the filtering feature of C-elements and redundant feedback structure. Extensive simulation results demonstrate the robustness of the proposed latch. The proposed LP-TNU achieves extremely low power consumption because of the clock-gating technique and fewer transistors. Compared with reference latches, the proposed latch is the most robust with the lowest power consumption and power-delay-product. In addition, compared with TNU-resilient latches such as DNUHL, LCTNURL, TNURL, HLTNURL and TNUSH, the proposed LP-TNU achieves a 62.68 % reduction on average in power consumption, 9.54 % reduction on average in delay, 20.75 % reduction on average in area overhead, 69.98 % reduction on average in the area-power-delay product. At the same time, the proposed latch is insensitive to variations of the process, supply voltage, and working temperature.</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"157 \",\"pages\":\"Article 115417\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424000970\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424000970","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Technology scaling of integrated circuits into nanoscale feature sizes has decreased the effectiveness of existing single-node-upset and double-node-upset hardening techniques in harsh radiation environments. This paper proposes a low-power triple-node-upset resilient latch (LP-TNU) based on approximate C-elements and cross-interlocking structure. The proposed LP-TNU achieves TNU resilience based on the filtering feature of C-elements and redundant feedback structure. Extensive simulation results demonstrate the robustness of the proposed latch. The proposed LP-TNU achieves extremely low power consumption because of the clock-gating technique and fewer transistors. Compared with reference latches, the proposed latch is the most robust with the lowest power consumption and power-delay-product. In addition, compared with TNU-resilient latches such as DNUHL, LCTNURL, TNURL, HLTNURL and TNUSH, the proposed LP-TNU achieves a 62.68 % reduction on average in power consumption, 9.54 % reduction on average in delay, 20.75 % reduction on average in area overhead, 69.98 % reduction on average in the area-power-delay product. At the same time, the proposed latch is insensitive to variations of the process, supply voltage, and working temperature.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.