分析反常 C-V 行为以提取双 BOX 结构未掺杂多晶硅中的陷阱密度

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-04-26 DOI:10.1016/j.sse.2024.108946

Yang Huang , Yiyi Yan , Massinissa Nabet , Fanyu Liu , Bo Li , Binhong Li , Zhengsheng Han , Sorin Cristoloveanu , Jean-Pierre Raskin

{"title":"分析反常 C-V 行为以提取双 BOX 结构未掺杂多晶硅中的陷阱密度","authors":"Yang Huang , Yiyi Yan , Massinissa Nabet , Fanyu Liu , Bo Li , Binhong Li , Zhengsheng Han , Sorin Cristoloveanu , Jean-Pierre Raskin","doi":"10.1016/j.sse.2024.108946","DOIUrl":null,"url":null,"abstract":"<div><p>A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"217 ","pages":"Article 108946"},"PeriodicalIF":1.4000,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure\",\"authors\":\"Yang Huang , Yiyi Yan , Massinissa Nabet , Fanyu Liu , Bo Li , Binhong Li , Zhengsheng Han , Sorin Cristoloveanu , Jean-Pierre Raskin\",\"doi\":\"10.1016/j.sse.2024.108946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"217 \",\"pages\":\"Article 108946\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000959\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000959","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

为了揭示用于提高射频 SOI 基底面性能的未掺杂多晶硅的电气特性，我们引入了一种新的双 BOX 结构。在电容-电压（C-V）特性中可以清楚地观察到高原现象，这是由于在晶界处形成的势垒的影响。我们提出了一种基于三元素电路模型的切向近似方法，用于修正测量到的 C-V 曲线。利用修正后的 C-V 曲线，可以确定多晶硅中每个频率的有效陷阱密度分布。

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Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure

A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.