器件可靠性和温度对晶闸管的影响：纳米结构 V2O5

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-04-23 DOI:10.1109/TDMR.2024.3392634

Sharmila B;Ashutosh Kumar Dikshit;Priyanka Dwivedi

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引用次数: 0

摘要

本文展示了基于五氧化二钒（V2O5）的纳米结构忆阻器器件的制造、测试、可靠性以及温度对其的影响。对来自 2 英寸加工晶圆的器件进行了可扩展性、可重复性和可靠性测试。忆阻器器件的可靠性测试是在 293 K 至 383 K 的不同温度下进行的实时测试。在383 K时，电流开关比为300，是室温（RT）的250倍。此外，在 383 K 的最佳温度下，这些忆阻器器件的结果具有很高的可重复性和可靠性。这些测试结果证明，基于 V2O5 的晶圆级合成忆阻器可用于高温应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Device Reliability and Effect of Temperature on Memristors: Nanostructured V₂O₅

This paper demonstrates the fabrication, testing, reliability and impact of temperature on the nanostructured vanadium pentoxide (V2O5) based memristor devices. The scalability, repeatability and reliability tests were performed across the devices from 2 inch processed wafers. The reliability test of the memristor devices was conducted by performing real time testing with varying temperature from 293 K to 383 K. The performance metric of the memristor devices were enhanced with the increase in the device testing temperature. The current switching ratio 300 was observed at 383 K, which is

$\sim$

250 times higher than the room temperature (RT). In addition, these memristor devices offer highly repeatable and reliable results at optimum temperature of 383 K. These test results have proved that the demonstrated wafer scale synthesized V2O5 based memristors can be used for high temperature applications.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.