接入区平面度对 InAlN/GaN 高频晶体管低频噪声性能影响的比较研究

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-04-22 DOI:10.1109/JEDS.2024.3392174

Yatexu Patel;Pouya Valizadeh

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引用次数: 0

摘要

本文比较了金属面 InAlN/AlN/GaN 异质结构场效应晶体管（HFET）的低频漏极噪声电流特性，该器件仅在栅极下具有鳍状结构，而在接入区则保持平面结构。有证据表明，这两种器件类型都遵循载流子数波动（CNF）趋势和 1/f 噪声的相关迁移率波动（CMF）模型。因此，门控沟道噪声被认为是这两种器件类型的主要噪声源。前一类器件的 1/f 噪声性能更好，漏极噪声-电流谱密度更低。这一现象可能是由于门控沟道下存在较高的二维电子气体（2DEG）浓度，掩盖了载流子数量和迁移率波动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs

The low frequency drain noise-current characteristics of metallic-face InAlN/AlN/GaN heterostructure field effect transistors (HFETs) having fin structures only under the gate, while maintaining a planar structure in the access regions, are compared to those of the HFETs having fin structures stretched from source to drain. Evidence indicates that both device types follow the trends of carrier number fluctuation (CNF) with correlated mobility fluctuation (CMF) model of 1/f noise. Accordingly, the noise of the gated channel has been identified as the dominant noise source for both device types. Devices from the former category exhibit improved 1/f noise performance with lower drain noise-current spectral density. This observation could be due to presence of a higher two-dimensional electron gas (2DEG) concentration under the gated-channel overshadowing the carrier number and mobility fluctuations.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.