SOI-MOS 中自热效应的发热机制

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zheng-Lai Tang;Bing-Yang Cao
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引用次数: 0

摘要

微电子器件向纳米级发展加剧了自热挑战,影响了效率和耐用性。了解这种尺度下的发热机制至关重要,但超越焦耳热的研究仍然有限。本文模拟了纳米级绝缘体上金属氧化物半导体场效应晶体管(SOI-MOS)的自热效应,并研究了焦耳热、重组热和珀尔帖-汤姆逊热等不同发热机制的特征和影响。我们的研究结果提供了硅沟道层内各种发热机制的详细二维分布和强度。我们发现,在纳米尺度上,珀尔帖-汤姆逊热与焦耳热的量级相同,并且在栅极下呈现出冷热源交替分布的模式。但重组热相对可以忽略不计。对不同热机制影响的分析强调了焦耳热的重要作用。虽然偏移效应限制了珀尔帖-汤姆逊热的影响,但其对器件热性能的重要性不容忽视。更重要的是,本研究调查了特征尺寸对不同发热机制的影响,揭示了珀尔帖-汤姆逊热的尺寸依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heat Generation Mechanisms of Self-Heating Effects in SOI-MOS
The development of microelectronic devices to the nanoscale intensifies self-heating challenges, affecting efficiency and durability. Understanding the mechanisms of heat generation at this scale is crucial, yet research extending beyond Joule heat remains limited. This paper simulates the self-heating effect of Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistors (SOI-MOS) at the nanoscale and researches the characteristic and influence of different heat generation mechanisms, including the Joule heat, recombination heat and Peltier-Thomson heat. Our results provide a detailed two-dimensional distribution and intensity of various heat generation mechanisms within the silicon channel layer. It is found that Peltier-Thomson heat has the same magnitude as Joule heat at the nanoscale, and exhibits an alternating distribution pattern of hot and cold sources under the gate. But recombination heat is relatively negligible. The analysis of the influence of different heat mechanisms emphasizes the important role of Joule heat. While the offset effect limits the impact of Peltier-Thomson heat, its significance to device thermal performance should not be ignored. More importantly, this study investigates the impact of characteristic size on different heat generation mechanisms, revealing the size dependence of Peltier-Thomson heat.
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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