Hui Xu , Xiaodong Ai , Ruijun Ma , Huaguo Liang , Zhengfeng Huang , Jiuqi Li , Lin Tang
{"title":"高可靠性、低开销的四重节点上移容错锁存器设计","authors":"Hui Xu , Xiaodong Ai , Ruijun Ma , Huaguo Liang , Zhengfeng Huang , Jiuqi Li , Lin Tang","doi":"10.1016/j.microrel.2024.115413","DOIUrl":null,"url":null,"abstract":"<div><p>With the advancement of semiconductor technology and the continual reduction in the feature size of transistors within integrated circuits (ICs), ICs are becoming more and more vulnerable to soft errors induced by energetic particles in harsh radiation environments. To mitigate the impact of soft error on ICs. This paper proposes a quadruple-node-upset tolerant latch (LCQNUT), which consists of two parts: a storage module and a three-stage interception module. The storage module is composed of 12 dual-input inverters. The three-stage interception module is composed of 6 dual-input C-elements (CEs). Based on the CEs and dual-input inverters' blocking capability, the proposed LCQNUT latch can efficiently tolerate the simultaneous upset of any four internal node combinations. Simulation results indicate the proposed LCQNUT latch has the smallest power consumption, area overhead, and area-power-delay product (APDP) compared to the latches with the same soft tolerance ability (D-LATCH, HS-QNU, QNUTL). It has moderate sensitivity to process, voltage, and temperature (PVT).</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"157 ","pages":"Article 115413"},"PeriodicalIF":1.6000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A highly reliable and low-overhead quadruple-node-upset tolerant latch design\",\"authors\":\"Hui Xu , Xiaodong Ai , Ruijun Ma , Huaguo Liang , Zhengfeng Huang , Jiuqi Li , Lin Tang\",\"doi\":\"10.1016/j.microrel.2024.115413\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>With the advancement of semiconductor technology and the continual reduction in the feature size of transistors within integrated circuits (ICs), ICs are becoming more and more vulnerable to soft errors induced by energetic particles in harsh radiation environments. To mitigate the impact of soft error on ICs. This paper proposes a quadruple-node-upset tolerant latch (LCQNUT), which consists of two parts: a storage module and a three-stage interception module. The storage module is composed of 12 dual-input inverters. The three-stage interception module is composed of 6 dual-input C-elements (CEs). Based on the CEs and dual-input inverters' blocking capability, the proposed LCQNUT latch can efficiently tolerate the simultaneous upset of any four internal node combinations. Simulation results indicate the proposed LCQNUT latch has the smallest power consumption, area overhead, and area-power-delay product (APDP) compared to the latches with the same soft tolerance ability (D-LATCH, HS-QNU, QNUTL). It has moderate sensitivity to process, voltage, and temperature (PVT).</p></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"157 \",\"pages\":\"Article 115413\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424000933\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424000933","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
随着半导体技术的发展和集成电路(IC)中晶体管特征尺寸的不断缩小,集成电路越来越容易受到恶劣辐射环境中高能粒子诱发的软误差的影响。为了减轻软误差对集成电路的影响。本文提出了一种四重节点上移容错锁存器(LCQNUT),它由两部分组成:存储模块和三级拦截模块。存储模块由 12 个双输入反相器组成。三级拦截模块由 6 个双输入 C 元件 (CE) 组成。基于 CE 和双输入反相器的阻塞能力,拟议的 LCQNUT 锁存器可以有效地容忍任意四个内部节点组合的同时破坏。仿真结果表明,与具有相同软容错能力的锁存器(D-LATCH、HS-QNU、QNUTL)相比,所提出的 LCQNUT 锁存器的功耗、面积开销和面积-功耗-延迟积(APDP)最小。它对工艺、电压和温度 (PVT) 的敏感度适中。
A highly reliable and low-overhead quadruple-node-upset tolerant latch design
With the advancement of semiconductor technology and the continual reduction in the feature size of transistors within integrated circuits (ICs), ICs are becoming more and more vulnerable to soft errors induced by energetic particles in harsh radiation environments. To mitigate the impact of soft error on ICs. This paper proposes a quadruple-node-upset tolerant latch (LCQNUT), which consists of two parts: a storage module and a three-stage interception module. The storage module is composed of 12 dual-input inverters. The three-stage interception module is composed of 6 dual-input C-elements (CEs). Based on the CEs and dual-input inverters' blocking capability, the proposed LCQNUT latch can efficiently tolerate the simultaneous upset of any four internal node combinations. Simulation results indicate the proposed LCQNUT latch has the smallest power consumption, area overhead, and area-power-delay product (APDP) compared to the latches with the same soft tolerance ability (D-LATCH, HS-QNU, QNUTL). It has moderate sensitivity to process, voltage, and temperature (PVT).
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.