用于灵敏和选择性检测正丁醇的 α-Fe2O3 纳米棒的合成

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yina Yang , Yufeng Liu , Xiaohong Zheng , Xinfeng Qiao
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引用次数: 0

摘要

在不同的环境中,高浓度的正丁醇会对人的感官和神经系统产生一定的危害,而电化学传感器因耗电量大而限制了其广泛应用,因此开发一种低能耗的半导体正丁醇传感器非常有意义。本文采用一步水热法制备了α-Fe2O3纳米棒,然后将其组装成能够检测正丁醇的正丁醇传感器,并研究了两种不同煅烧温度对传感器性能的影响。由于 S1-250 具有较高的 Fe3+ 含量、较高的氧空位含量和较大的比表面积,为气体吸附提供了更多的活性位点,这使得 S1-250 在 215 ℃ 时对 100 ppm 正丁醇的响应达到了 88.4。最后,还讨论了煅烧温度对传感器的影响和响应机制。本文为由单一材料 α -Fe2O3 组装而成的低能正丁醇传感器提供了广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of α-Fe2O3 nanorod for sensitive and selective detection of the n-butanol

In different environments, high concentration of n-butanol will have certain harm to the human senses and nervous system, meanwhile the electrochemical sensor limits its widespread use due to its high power consumption, so it is very meaningful to develop a semiconductor n-butanol sensor with low energy consumption. In this paper, α-Fe2O3 nanorods were prepared by one-step hydrothermal method and then assembled into a n-butanol sensor capable of detecting n-butanol, and the effects of two different calcination temperatures on the performance of the sensor were investigated. Due to its higher Fe3+ content, higher oxygen vacancy content and larger specific surface area, S1-250 provided more active sites for gas adsorption, which making the response of S1-250 to 100 ppm n-butanol at 215 °C reached to 88.4. Finally, the effect of the calcination temperature on the sensor and the response mechanism were discussed. This paper offers promising applications for low-energy n-butanol sensors assembled from a single material α −Fe2O3.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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