在柔性衬底上开发基于共晶镓铟的透明导电电极,用于集成触摸传感器

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hongseok Kim , Youngjun Song , Sung-pil Chang
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引用次数: 0

摘要

本研究调查了基于液态金属 (LM) 的透明导电电极 (TCE) 对柔性基底的适应性及其在各种电子领域的潜在应用。为此,研究人员采用了传统的微加工技术,对聚二甲基硅氧烷(PDMS)通道进行了图案化,并引入了共晶镓铟(EGaIn)液态金属,以提高透射率并降低片层电阻。我们制作了具有不同间距长度和宽度的微流体通道结构,其网格模式分别为模式 A(间距 2000 μm,宽度 40 μm)、模式 B(间距 2000 μm,宽度 80 μm)、模式 C(间距 200 μm,宽度 40 μm)和模式 D(间距 200 μm,宽度 80 μm)。在图案 A、B、C 和 D 中,基于 EGaIn LM 的 TCE 的相应平均透射率值分别为 90%、71.8%、61.8% 和 43.2%。为了说明触控传感器的应用潜力,对图案 A、B、C 和 D 在 0 N 至 150 N 的外力作用下的电阻变化进行了评估,结果显示电阻变化分别为 0.0265 Ω、0.03617 Ω、0.03977 Ω 和 0.11629 Ω。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Development of eutectic gallium-indium-based transparent conductive electrodes on flexible substrates for touch sensor integration

Development of eutectic gallium-indium-based transparent conductive electrodes on flexible substrates for touch sensor integration

In this study, the adaptability of liquid metal (LM)-based transparent conductive electrodes (TCEs) to flexible substrates and their potential applications in various electronics fields were investigated. To achieve this, conventional microfabrication techniques were employed to pattern polydimethylsiloxane (PDMS) channels and introduce an Eutectic Gallium-Indium (EGaIn) LM with the aim of enhancing transmittance and reducing sheet resistance. Microfluidic channel structures with varying pitch lengths and widths were fabricated in the types of grid patterns, labeled Pattern A (2000 μm pitch, 40 μm width), Pattern B (2000 μm pitch, 80 μm width), Pattern C (200 μm pitch, 40 μm width), and Pattern D (200 μm pitch, 80 μm width. The corresponding average transmittance values for the EGaIn LM-based TCE were 90 %, 71.8 %, 61.8 %, and 43.2 % for Patterns A, B, C, and D, respectively. To illustrate the potential in touch sensor applications, resistance changes in Patterns A, B, C, and D were assessed under applied forces ranging from 0 N to 150 N, revealing resistance changes of 0.0265 Ω, 0.03617 Ω, 0.03977 Ω, and 0.11629 Ω, respectively.

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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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