重离子辐照碳化硅结势垒肖特基二极管的失效分析

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-04-19 DOI:10.1016/j.microrel.2024.115401

Shuang Cao, Qingkui Yu, Qianyuan Wang, He Wang, Yi Sun, He Lv, Bo Mei, Rigen Mo, Pengwei Li, Hongwei Zhang

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引用次数: 0

摘要

利用欧杰电子能谱（AES）、发射显微镜（EMMI）、聚焦离子束（FIB）、透射电子显微镜（TEM）和其他方法，分析了重离子辐照在碳化硅（SiC）结势垒肖特基二极管（JBSD）中造成的损伤，包括单次烧毁（SEB）和单次漏电流（SELC）。观察到 SEB 的损伤从肖特基触点通过外延层延伸到碳化硅衬底。导致 SELC 的损伤与肖特基触点的微烧蚀有关。结论是在大电场下入射的高能粒子诱发了肖特基触点的损坏，形成了漏电流通路，导致了碳化硅器件中的 SEB 和 SELC。

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Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes

An analysis of damage, including single event burnout (SEB) and single event leakage current (SELC) caused by heavy ion irradiation in silicon carbide (SiC) junction barrier Schottky diodes (JBSDs), was performed using Auger electron spectroscopy (AES), emission microscope (EMMI), focused ion beam (FIB), transmission electron microscopy (TEM) and other methods. The damage of SEB extending from the Schottky contact through the epitaxial layer to the SiC substrate was observed. The damage causing SELC was related to the micro-burnout of the Schottky contact. It was concluded that the damage of Schottky contact was induced by incident high-energy particles under a large electric field, forming a leakage current path, resulting in SEB and SELC in the SiC device.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.