利用全覆盖铝反射器和高反射镍/铑对电极提高深紫外发光二极管的效率

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-04-11 DOI:10.1088/1361-6641/ad3a92

Zhenxing Lv, Zhefu Liao, Shengjun Zhou

{"title":"利用全覆盖铝反射器和高反射镍/铑对电极提高深紫外发光二极管的效率","authors":"Zhenxing Lv, Zhefu Liao, Shengjun Zhou","doi":"10.1088/1361-6641/ad3a92","DOIUrl":null,"url":null,"abstract":"Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"78 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode\",\"authors\":\"Zhenxing Lv, Zhefu Liao, Shengjun Zhou\",\"doi\":\"10.1088/1361-6641/ad3a92\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.\",\"PeriodicalId\":21585,\"journal\":{\"name\":\"Semiconductor Science and Technology\",\"volume\":\"78 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Science and Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad3a92\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad3a92","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

提高 p 面的反射率是改善倒装芯片发光二极管（FCLED）光电性能的有效方法。在此，我们提出了一种全覆盖铝反射器（FAR）和一种高反射镍/铑对电极，以提高深紫外（DUV）FCLED 的性能。理论上讨论了 FAR 和 Ni/Rh 电极对光萃取效率（LEE）影响的物理机制。模拟结果表明，结合使用 FAR 和 Ni/Rh 电极，横向电偏振光和横向磁偏振光的萃取效率分别提高了 13.62% 和 27.08%。在注入电流为 100 mA 时，使用 FAR 和 Ni/Rh 电极制造的 DUV FCLED 的外部量子效率为 4.01%，堵壁效率为 2.92%，分别比传统 DUV FCLED 高出 16.85% 和 13.18%。这些结果支持了 FAR 和 Ni/Rh 电极在高功率 DUV LED 应用中的前景。

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Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode

Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.