基于堆叠晶体管的低面积、低延迟三节点跃迁自恢复设计

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hui Xu;Jiuqi Li;Ruijun Ma;Huaguo Liang;Chaoming Liu;Senling Wang;Xiaoqing Wen
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引用次数: 0

摘要

随着晶体管特征尺寸的急剧扩大,CMOS 电路中由电荷共享引起的单事件三节点猝发(TNU)已成为一个重要的可靠性问题。本文基于 N 型堆叠晶体管,提出了一种名为 LORD-TNU 的 TNU 自恢复锁存器。利用堆叠晶体管减少了锁存器中敏感节点的数量。此外,我们还使用三个模块相互保护。如果其中一个模块发生软错误,其余模块可以恢复已损坏的模块。这种设计不仅节省了延迟开销,还最大限度地减少了面积开销。仿真结果表明,与四种典型的 TNU 加固锁存器相比,所提出的 LORD-TNU 锁存器平均分别减少了 49.76% 的面积开销、56.07% 的功耗、40.17% 的延迟和 72.56% 的功率-延迟-积(PDP)。此外,全面的 PVT(工艺、电压、温度)和蒙特卡罗仿真证实了我们的 LORD-TNU 锁存器的稳健性,证明了它在各种工艺角、电源电压和温度变化下的稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors
With the aggressive scaling in the feature size of transistors, single-event triple-node-upsets (TNUs) induced by charge sharing in CMOS circuits have become a significant reliability problem. In this paper, based on N-type stacked transistors, a TNU self-recovery latch called LORD-TNU is proposed. Utilizing the stacked transistors to reduce the count of sensitive nodes in the latch. In addition, we use three modules to protect each other. In the event of a soft error in one module, the remaining modules can restore the corrupted module. This design not only saves delay overhead but also minimizes area overhead. Simulation results show that compared with the four typical TNU hardened latches, the proposed LORD-TNU latch reduces area overhead by 49.76%, power consumption by 56.07%, delay by 40.17%, and the power-delay-product (PDP) by 72.56% on average, respectively. Moreover, the robustness of our LORD-TNU latch is confirmed by comprehensive PVT (Process, Voltage, Temperature) and Monte Carlo simulations, demonstrating its stability across a range of process corners, supply voltage, and temperature variations.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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