三氧化钨纳米颗粒修饰的氧化亚铜膜非酶多巴胺传感器

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-04-10 DOI:10.1109/JEDS.2024.3387324

Jung-Chuan Chou;Wei-Shun Chen;Po-Hui Yang;Po-Yu Kuo;Chih-Hsien Lai;Yu-Hsun Nien

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引用次数: 0

摘要

非酶多巴胺（DA）传感器在诊断和治疗人类疾病方面非常重要。然而，非酶切传感器经常会受到其他物质的干扰，这给此类传感器带来了选择性差的挑战。在此，我们通过简单的水热法制备了三氧化钨纳米粒子（WO3 NPs），并将其固定在氧化亚铜（Cu2O）薄膜上。结果表明，WO3 NPs 具有更好的选择性，从而避免了其他物质的干扰。基于 WO3 NPs 修饰的 Cu2O 膜的 DA 传感器具有优异的 DA 检测性能，线性范围宽至 1~μmu \text{M}$ 至 10 mM，检出限低至 0.21~μmu \text{M}$ ，并且对常见干扰物质具有良好的选择性。这种非酶促性 DA 传感器结构简单、易于制造、体积小，适合大规模生产。

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Tungsten Trioxide Nanoparticles Modified Cuprous Oxide Film Non-Enzymatic Dopamine Sensor

Non-enzymatic dopamine (DA) sensors are important in diagnosing and treating human diseases. However, non-enzymatic sensors frequently encounter interference from other substances, posing a challenge of poor selectivity for such sensors. Herein, we prepared tungsten trioxide nanoparticles (WO3 NPs) via a simple hydrothermal method and immobilized them onto a cuprous oxide (Cu2O) film. The results demonstrate that WO3 NPs offer improved selectivity, thus avoiding interference from other substances. The DA sensor based on the Cu2O film modified with WO3 NPs exhibits excellent DA detection performance, with a wide linear range of

$1~\mu \text{M}$

to 10 mM, a low limit of detection of

$0.21~\mu \text{M}$

, and good selectivity against common interfering substances. This non-enzymatic DA sensor features a simple structure, easy fabrication, small size, and suitability for mass production.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.