Do-Yeon Lee, Woon-San Ko, Ki-Nam Kim, Jun-Ho Byun, Eun-Gi Kim, So-Yeon Kwon, Ga-Won Lee
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Analysis of metal and zinc oxide semiconductor interface resistance using transmission line method
The transmission line method (TLM) is modified to analyze the contact resistance between the metal and zinc oxide semiconductor considering interface resistance. TCAD is used to simulate an ideal defect-less state and compare it with experimental result. It is found that the current transfer length can be overestimated in conventional TLM measurement. The importance of interface resistance is shown through interface trap and Schottky contact effect analysis: Resistance comparison between different metal used device, and the activation energy shift measurement after O2 pre-annealing. Based on these, the conventional resistance equation for TLM is corrected by separating channel resistance and non-ideal contact resistance. The mobility and temperature coefficient of resistance (TCR) of ZnO channel are extracted using the suggested method. This shows the importance of metal/semiconductor interface resistance in devices using semiconductor channel.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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