不同氧源下 ALD-Hf0.5Zr0.5O2 薄膜的铁电特性分析

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-03-30 DOI:10.1016/j.sse.2024.108911

Seungbin Lee , Yong Chan Jung , Hye Ryeon Park , Seongbin Park , Jongmug Kang , Juntak Jeong , Yeseo Choi , Jin-Hyun Kim , Jaidah Mohan , Harrison Sejoon Kim , Jiyoung Kim , Si Joon Kim

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引用次数: 0

摘要

Hf0.5Zr0.5O2 (HZO) 铁电薄膜大多是通过原子层沉积 (ALD) 工艺沉积而成，厚度小于 10 纳米。由于原子层沉积过程中使用的氧源会影响沉积 HZO 薄膜中的残留物，因此氧源的选择是提高铁电性的重要因素之一。从这个角度出发，本研究全面分析了不同氧源（O3、H2O 和 D2O）下 10 纳米厚 ALD-HZO 薄膜的铁电特性。重水（氘水，D2O）被用作示踪剂，以确定氢的来源，氢可能来自未反应的金属前驱体或未反应的羟基。结果表明，与基于 O3 的 HZO 电容器相比，在基于 H2O 和 D2O 的 HZO 电容器中观察到的铁电极化降低和漏电流增加是由于氧源造成的。这些结果凸显了在 ALD 过程中使用 O3 作为无氢氧源以获得更好的铁电性的重要性。

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Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources

Ferroelectric Hf_0.5Zr_0.5O₂ (HZO) thin films are mostly deposited with a thickness of less than 10 nm by an atomic layer deposition (ALD) process. Since the oxygen source used in the ALD process affects the residues in the deposited HZO films, the choice of oxygen source can be one of the important factors to improve ferroelectricity. From this point of view, the ferroelectric properties of 10-nm-thick ALD-HZO films according to the oxygen source (O₃, H₂O, and D₂O) were comprehensively analyzed in this study. Heavy water (deuterium water, D₂O) was used as a tracer to pinpoint the origin of hydrogen that could be derived from unreacted metal precursors or unreacted hydroxyl groups. As a result, it was revealed that the decrease in ferroelectric polarization and increase in leakage current observed in the H₂O- and D₂O-based HZO capacitors compared to the O₃-based HZO capacitor were due to the oxygen source. These results highlight the importance of using O₃ as a hydrogen-free oxygen source in the ALD process to achieve better ferroelectricity.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.