利用蒙特卡洛集合法研究 WS2 的电子传输特性

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-03-14 DOI:10.1088/1361-6641/ad2ec6

M Derya Alyörük

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引用次数: 0

摘要

在仅存在内在散射机制的情况下，使用集合蒙特卡罗技术研究了二硫化钨（WS2）薄片的电子传输特性。材料的输运特性是在双谷模型中获得的，其中考虑了 K 谷和 Q 谷中的谷内和谷间散射。在某些外加磁场值中观察到了速度过冲效应。在 K 谷和 Q 谷之间能量差（ΔEKQ）的某些值上会出现负差分现象，因此ΔEKQ 和 Q 谷中载流子的有效质量对 WS2 的传输和迁移率特性起着至关重要的作用。我们计算了载流子的迁移率与温度的函数关系，结果与现有的一些理论和实验预测相符。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electronic transport properties of WS2 using ensemble Monte Carlo method

The electronic transport characteristics of tungsten disulfide (WS₂) sheets are studied using the ensemble Monte Carlo technique in the presence of intrinsic scattering mechanisms only. The transport properties of the material are obtained in a two-valley model where intra- and inter-valley scatterings are considered in K and Q valleys. The velocity overshoot effect is observed for some applied field values. Negative differential phenomena are seen for some values of the energy difference between K and Q valleys (

ΔEKQ

), therefore

ΔEKQ

and the effective mass of carriers in the Q valley has a critical role in the transport and mobility characteristics of WS₂. The mobility of carriers is calculated as a function of temperature and the results are compatible with some existing theoretical and experimental predictions.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.