离子辅助磁控管沉积氮化铝薄膜

Q4 Engineering

Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600309

R. V. Selyukov, V. V. Naumov

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引用次数: 0

摘要

摘要通过反应磁控溅射法在浮动电位和-15 V偏压下在基底上制备氮化铝薄膜。研究发现，离子辅助沉积有利于形成纤维纹理 AlN (104)。这一结果可解释为离子轰击在薄膜中产生了压应力，受压薄膜的优先取向 (104) 有利于将弹性应变能降到最低。离子辅助沉积可提供致密的大颗粒结构的氮化铝薄膜，这是由于高金刚原子移动性的缘故。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Ion-Assisted Magnetron Deposition of AlN Films

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Ion-Assisted Magnetron Deposition of AlN Films

Abstract

AlN films are prepared by reactive magnetron sputtering at a floating potential and at the bias –15 V on the substrate. It is found that ion-assisted deposition facilitates the formation of fiber texture AlN (104). This result can be explained by generation of compressive stress in films due to ion bombardment and preferred orientation (104) is favored for stressed films minimizing the elastic strain energy. Ion-assisted deposition provides dense and large-grained structure of AlN films due to high adatom mobility.

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.