利用厚铜金属化技术改善 AlGaN/GaN HEMT 噪声图，用于卫星通信应用

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-22 DOI:10.1109/JEDS.2024.3381030

Howie Tseng;Yueh-Chin Lin;Chieh Cheng;Po-Wei Chen;Heng-Tung Hsu;Yi-Fan Tsao;Edward Yi Chang

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引用次数: 0

摘要

本研究对具有厚铜金属化层的 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 进行了研究，并分析了其射频 (RF) 性能和可靠性。通过使用 6.0 ~\mu \text{m}$的厚铜金属化作为互连，可以提高截止频率（fT）、最大振荡频率（fmax）和功率性能。此外，厚铜金属化器件在 12、14、28 和 38 GHz 频率下的最小噪声系数（NFmin）分别降低了 0.7、1.0、2.2 和 2.8 dB，这可归因于厚铜金属化降低了源电阻和漏电阻。此外，在高漏极至源极电压（VDS）和高温条件下进行应力测试时，所提出的器件表现出良好的稳定性。结果表明，厚铜金属化技术在卫星通信系统中具有巨大的应用潜力。

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Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of

$6.0 ~\mu \text{m}$

as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.