离子通道和共植入物对硅中离子范围和损伤的影响：利用 PL、SRP、SIMS 和 MC 模型进行的研究

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-19 DOI:10.1109/JEDS.2024.3379328

Michael I. Current;Takuya Sakaguchi;Yoji Kawasaki;Viktor Samu;Anita Pongracz;Luca Sinko;Árpád Kerekes;Zsolt Durkó

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引用次数: 0

摘要

本研究使用光致发光（PL）和其他载流子重配敏感探针，结合扩散电阻曲线（SRP）、SIMS 和 IMSIL MC 计算，监测硅（100）中高通道和随机束向 7.5 MeV B 和 10 MeV P 和 As 曲线中的离子范围和损伤程度，以及 50 keV 磷植入物的各种共植入物组合。退火对 10 MeV 曲线的影响表明，在植入和退火样品中，由于植入损伤，PL 数据发生了强烈偏移。在来自 MeV 植入缺陷中心的 PL 信号中出现了奇怪的 "间歇 "现象。

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Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.