利用 Cl2 等离子处理和硫气退火增强 PVD-WS2 薄膜的导电性

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi
{"title":"利用 Cl2 等离子处理和硫气退火增强 PVD-WS2 薄膜的导电性","authors":"Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi","doi":"10.1109/JEDS.2024.3378745","DOIUrl":null,"url":null,"abstract":"The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10475166","citationCount":"0","resultStr":"{\"title\":\"Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing\",\"authors\":\"Keita Kurohara;Shinya Imai;Takuya Hamada;Tetsuya Tatsumi;Shigetaka Tomiya;Kuniyuki Kakushima;Kazuo Tsutsui;Hitoshi Wakabayashi\",\"doi\":\"10.1109/JEDS.2024.3378745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10475166\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10475166/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10475166/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

二硫化钨(WS2)薄膜是一种物理气相沉积(PVD)技术,采用溅射法(即物理气相沉积),通过氯(Cl2)等离子体处理和硫气退火(SVA)增强了其导电性。要将 WS2 薄膜用于热电设备,必须控制其载流子浓度。因此,我们将 WS2 薄膜暴露在 Cl2-等离子体中,作为一种掺杂方法。此外,还进行了 SVA 处理,以提高薄膜的结晶度,并可能引入活化掺杂剂。结果,经 Cl2- 等离子体处理的 PVD-WS2 薄膜的电导率(0.440 S/m)比未经处理的 PVD-WS2 薄膜的电导率(0.201 S/m)提高了一倍多。根据 X 射线光电子能谱中观察到的正峰值移动,本实验中的掺杂类型被认为是 n 型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing
The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信