同时具有抗超高温气流侵蚀和抗高温氧化性能的 C/C-HfC-SiC 复合材料

IF 8.4 1区 材料科学 Q1 CHEMISTRY, PHYSICAL
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引用次数: 0

摘要

通过反应熔渗(RMI)结合气态硅渗(GSI),成功制备了含有已形成的 Si-HfC-HfSi 抗烧蚀层和 SiC 抗氧化层的 HfC-SiC 改性 C/C 复合材料。对含有 GSI(记为 RG-CHS)和不含 GSI(记为 R-CHS)的 C/C-HfC-SiC 复合材料的抗氧化和抗烧蚀性能进行了比较研究。在 1500 °C 下氧化 200 分钟后,RG-CHS 的氧化膜保持完好。经过 GSI 处理后,质量烧蚀率和线性烧蚀率分别从 1.31 mg/s 和 7.36 μm/s 降至 0.12 mg/s 和 -0.22 μm/s。低熔点相的引入和表面缺陷的减少可提高复合材料的耐高温氧化性和耐等离子烧蚀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

C/C-HfC-SiC composites with simultaneous the resistance to ultra-high temperature airflow erosion and high temperature oxidation

C/C-HfC-SiC composites with simultaneous the resistance to ultra-high temperature airflow erosion and high temperature oxidation

HfC-SiC modified C/C composites containing in situ formed Si-HfC-HfSi2 ablation resistant layer and SiC oxidation resistant layer were successfully prepared by reactive melt infiltration (RMI) combined with gaseous silicon infiltration (GSI). A comparative study was conducted on the anti-oxidation and anti-ablation performance of the C/C-HfC-SiC composites with GSI (noted as RG-CHS) and without GSI (noted as R-CHS). After oxidation at 1,500 °C for 200 min, the oxide film of RG-CHS remained intact. The mass and linear ablation rates decreased from 1.31 mg/s and 7.36 μm/s to 0.12 mg/s and −0.22 μm/s after GSI process, respectively. The introduction of low melting point phases and reducing surface defects can improve the high temperature oxidation resistance and plasma ablation resistance of the composites.

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来源期刊
Journal of Materiomics
Journal of Materiomics Materials Science-Metals and Alloys
CiteScore
14.30
自引率
6.40%
发文量
331
审稿时长
37 days
期刊介绍: The Journal of Materiomics is a peer-reviewed open-access journal that aims to serve as a forum for the continuous dissemination of research within the field of materials science. It particularly emphasizes systematic studies on the relationships between composition, processing, structure, property, and performance of advanced materials. The journal is supported by the Chinese Ceramic Society and is indexed in SCIE and Scopus. It is commonly referred to as J Materiomics.
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