{"title":"PEAR:针对延迟高效 3-D NAND 闪存的非平衡页间错误感知读取方案","authors":"Meng Zhang;Fei Wu;Qin Yu;Changsheng Xie","doi":"10.1109/TDMR.2023.3346190","DOIUrl":null,"url":null,"abstract":"Although three-dimensional (3D) NAND flash memory has demonstrated impressive benefits including high capacity and storage density, data reliability is now a major worry because of long-term storage and ongoing cell wear-out. Low-density parity-check (LDPC) codes are frequently utilized in flash storage systems because of their superior error correcting capabilities to guarantee data reliability. LDPC codes can be hard-decoded or soft-decoded with significant differences depending on the raw bit error rate (RBER). By using fine-grained memory sensing operations, high RBER leads to increased decoding iterations for hard-decoding and more read levels for soft-decoding. In order to reduce the number of decoding iterations and read levels by lowering the RBER, this paper proposes an unbalanced inter-page errors aware read strategy for 3D NAND flash memory, called PEAR. A preliminary experiment is initially carried out to demonstrate that high RBER causes an increase in the number of decoding iterations and read levels. The substantial RBER fluctuation between pages is next analyzed from the viewpoint of the threshold voltage shift. Finally, PEAR properly places the read voltages between the two states with the most and second-most electrons in accordance with the phenomenon of threshold voltage drift, enabling the employment of hard-decoding with low read levels and successfully avoiding soft-decoding procedures with larger RBER. According to simulation results, PEAR can dramatically reduce RBER, decoding iterations, read levels, and read latency.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 1","pages":"49-58"},"PeriodicalIF":2.5000,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3-D NAND Flash\",\"authors\":\"Meng Zhang;Fei Wu;Qin Yu;Changsheng Xie\",\"doi\":\"10.1109/TDMR.2023.3346190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Although three-dimensional (3D) NAND flash memory has demonstrated impressive benefits including high capacity and storage density, data reliability is now a major worry because of long-term storage and ongoing cell wear-out. Low-density parity-check (LDPC) codes are frequently utilized in flash storage systems because of their superior error correcting capabilities to guarantee data reliability. LDPC codes can be hard-decoded or soft-decoded with significant differences depending on the raw bit error rate (RBER). By using fine-grained memory sensing operations, high RBER leads to increased decoding iterations for hard-decoding and more read levels for soft-decoding. In order to reduce the number of decoding iterations and read levels by lowering the RBER, this paper proposes an unbalanced inter-page errors aware read strategy for 3D NAND flash memory, called PEAR. A preliminary experiment is initially carried out to demonstrate that high RBER causes an increase in the number of decoding iterations and read levels. The substantial RBER fluctuation between pages is next analyzed from the viewpoint of the threshold voltage shift. Finally, PEAR properly places the read voltages between the two states with the most and second-most electrons in accordance with the phenomenon of threshold voltage drift, enabling the employment of hard-decoding with low read levels and successfully avoiding soft-decoding procedures with larger RBER. According to simulation results, PEAR can dramatically reduce RBER, decoding iterations, read levels, and read latency.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"24 1\",\"pages\":\"49-58\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2023-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10371374/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10371374/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Although three-dimensional (3D) NAND flash memory has demonstrated impressive benefits including high capacity and storage density, data reliability is now a major worry because of long-term storage and ongoing cell wear-out. Low-density parity-check (LDPC) codes are frequently utilized in flash storage systems because of their superior error correcting capabilities to guarantee data reliability. LDPC codes can be hard-decoded or soft-decoded with significant differences depending on the raw bit error rate (RBER). By using fine-grained memory sensing operations, high RBER leads to increased decoding iterations for hard-decoding and more read levels for soft-decoding. In order to reduce the number of decoding iterations and read levels by lowering the RBER, this paper proposes an unbalanced inter-page errors aware read strategy for 3D NAND flash memory, called PEAR. A preliminary experiment is initially carried out to demonstrate that high RBER causes an increase in the number of decoding iterations and read levels. The substantial RBER fluctuation between pages is next analyzed from the viewpoint of the threshold voltage shift. Finally, PEAR properly places the read voltages between the two states with the most and second-most electrons in accordance with the phenomenon of threshold voltage drift, enabling the employment of hard-decoding with low read levels and successfully avoiding soft-decoding procedures with larger RBER. According to simulation results, PEAR can dramatically reduce RBER, decoding iterations, read levels, and read latency.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.