用于核安全环境的抗侧信道攻击 RHBD 12T SRAM 单元

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-12-25 DOI:10.1109/TDMR.2023.3346752

Syed Farah Naz;Debabrata Mondal;Ambika Prasad Shah

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引用次数: 0

摘要

核环境中的高能粒子使存储单元容易出现软错误。此外，攻击者通过侧信道攻击（SCA）提取 SRAM 单元的秘密数据，而漏功率分析攻击（LPA）则严重威胁着安全系统。本文介绍了一种高效的抗辐射和抗 LPA（RHLR12T）SRAM 单元，它既能抗辐射，又能抗 LPA，适用于核应用。它采用美国联合微电子公司（UMC）的 45nm CMOS 技术，在 1.0V 电源电压和 $27\mathrm {^{\circ }}\text{C}$ 工作温度下，比其他考虑过的 SRAM 单元（如 6T、Quatro、We-Quatro 和 RHMD10T）具有更高的速度、更强的写入稳定性和更高的重叠率。与 RHMD10T SRAM 单元相比，拟议的单元写入稳定性高 1.141 美元/mathrm {/times }$，写入访问时间短 1.55 美元/mathrm {/times }$，临界电荷增加 1.11 美元/mathrm {/times }$，重叠百分比提高 1.51 美元/mathrm {/times }$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment

Extremely energetic particles in the nuclear environment make memory cells prone to soft errors. Also, attackers extract secret data of SRAM cells via side-channel attacks (SCAs), and leakage power analysis attacks (LPAs) seriously threaten security systems. This paper indicates a highly effective radiation-hardened and LPA-resilient (RHLR12T) SRAM cell that is both radiation-resistant by design and LPA-resilient for nuclear applications. It offers better speed, enhanced writing stability and higher overlap percentage than other considered SRAM cells, such as 6T, Quatro, We-Quatro, and RHMD10T, utilising United Microelectronics Corporation (UMC) 45nm CMOS technology at the supply voltage of 1.0V and

$27\mathrm {^{\circ }}\text{C}$

operating temperature. The proposed cell gives

$1.141\mathrm {\times }$

higher write stability,

$1.55\mathrm {\times }$

lower write access time,

$1.11\mathrm {\times }$

increased critical charge and

$1.51\mathrm {\times }$

better overlap percentage than the RHMD10T SRAM cell.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.