Jaber Al Rashid;Mohsen Koohestani;Laurent Saintis;Mihaela Barreau
{"title":"基于 ADT 的电压调节器电磁鲁棒性的退化和可靠性建模:方法与案例研究","authors":"Jaber Al Rashid;Mohsen Koohestani;Laurent Saintis;Mihaela Barreau","doi":"10.1109/TDMR.2023.3340426","DOIUrl":null,"url":null,"abstract":"This paper presents an approach to develop degradation and reliability models of analog integrated circuit (IC) voltage regulators based on the long-term evolution of the electromagnetic compatibility (EMC) performance degradation due to the stress time-dependent accelerated degradation test (ADT). The ADT plan is designed and conducted on six samples of both UA78L05 and L78L05 ICs placed inside a climatic chamber combining both the thermal step-stress (i.e., 70-110 °C) and constant electrical overstress (i.e., 9 and 12 V) conditions for a total stress duration of 950 hours. All the selected UA78L05 and L78L05 samples are subjected to the direct power injection (DPI) measurement test under nominal conditions in order to characterize their immunity to electromagnetic interference (EMI). The statistical degradation data (i.e., the average injected power) of the aged samples is computed across the entire DPI frequency range for a variety of stress time duration. The proposed log-linear accelerated life-stress test (ALT) model is combined with the Weibull unreliability distribution function model to estimate the failure lifetime data against the applied voltage stress at three different failure threshold criterion. At various constant voltage overstress and threshold constraints, the lifetime reliability performance parameters (i.e., time-to-failure, probability of failure, model constants) of the tested device under tests (DUTs) were evaluated based on the measured degradation data. It is demonstrated that, for a limited number of samples under the combined influence of thermal step-stress with voltage overstress conditions, the proposed reliability model predicts with a very acceptable accuracy the lifetime reliability of both UA78L05 and L78L05 tested ICs, developed based on the conducted immunity degradation data. The physics-based modeling approach is utilized to develop the model for the degradation paths based on the observed monotonic degradation of the measured degradation data as well as the conditions of the thermal step-stress ADT. In order to estimate the unknown parameters of the developed degradation model, the maximum likelihood estimation (MLE) method is combined with a genetic optimisation algorithm.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 1","pages":"2-13"},"PeriodicalIF":2.5000,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Degradation and Reliability Modeling of EM Robustness of Voltage Regulators Based on ADT: An Approach and a Case Study\",\"authors\":\"Jaber Al Rashid;Mohsen Koohestani;Laurent Saintis;Mihaela Barreau\",\"doi\":\"10.1109/TDMR.2023.3340426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an approach to develop degradation and reliability models of analog integrated circuit (IC) voltage regulators based on the long-term evolution of the electromagnetic compatibility (EMC) performance degradation due to the stress time-dependent accelerated degradation test (ADT). The ADT plan is designed and conducted on six samples of both UA78L05 and L78L05 ICs placed inside a climatic chamber combining both the thermal step-stress (i.e., 70-110 °C) and constant electrical overstress (i.e., 9 and 12 V) conditions for a total stress duration of 950 hours. All the selected UA78L05 and L78L05 samples are subjected to the direct power injection (DPI) measurement test under nominal conditions in order to characterize their immunity to electromagnetic interference (EMI). The statistical degradation data (i.e., the average injected power) of the aged samples is computed across the entire DPI frequency range for a variety of stress time duration. The proposed log-linear accelerated life-stress test (ALT) model is combined with the Weibull unreliability distribution function model to estimate the failure lifetime data against the applied voltage stress at three different failure threshold criterion. At various constant voltage overstress and threshold constraints, the lifetime reliability performance parameters (i.e., time-to-failure, probability of failure, model constants) of the tested device under tests (DUTs) were evaluated based on the measured degradation data. It is demonstrated that, for a limited number of samples under the combined influence of thermal step-stress with voltage overstress conditions, the proposed reliability model predicts with a very acceptable accuracy the lifetime reliability of both UA78L05 and L78L05 tested ICs, developed based on the conducted immunity degradation data. The physics-based modeling approach is utilized to develop the model for the degradation paths based on the observed monotonic degradation of the measured degradation data as well as the conditions of the thermal step-stress ADT. 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Degradation and Reliability Modeling of EM Robustness of Voltage Regulators Based on ADT: An Approach and a Case Study
This paper presents an approach to develop degradation and reliability models of analog integrated circuit (IC) voltage regulators based on the long-term evolution of the electromagnetic compatibility (EMC) performance degradation due to the stress time-dependent accelerated degradation test (ADT). The ADT plan is designed and conducted on six samples of both UA78L05 and L78L05 ICs placed inside a climatic chamber combining both the thermal step-stress (i.e., 70-110 °C) and constant electrical overstress (i.e., 9 and 12 V) conditions for a total stress duration of 950 hours. All the selected UA78L05 and L78L05 samples are subjected to the direct power injection (DPI) measurement test under nominal conditions in order to characterize their immunity to electromagnetic interference (EMI). The statistical degradation data (i.e., the average injected power) of the aged samples is computed across the entire DPI frequency range for a variety of stress time duration. The proposed log-linear accelerated life-stress test (ALT) model is combined with the Weibull unreliability distribution function model to estimate the failure lifetime data against the applied voltage stress at three different failure threshold criterion. At various constant voltage overstress and threshold constraints, the lifetime reliability performance parameters (i.e., time-to-failure, probability of failure, model constants) of the tested device under tests (DUTs) were evaluated based on the measured degradation data. It is demonstrated that, for a limited number of samples under the combined influence of thermal step-stress with voltage overstress conditions, the proposed reliability model predicts with a very acceptable accuracy the lifetime reliability of both UA78L05 and L78L05 tested ICs, developed based on the conducted immunity degradation data. The physics-based modeling approach is utilized to develop the model for the degradation paths based on the observed monotonic degradation of the measured degradation data as well as the conditions of the thermal step-stress ADT. In order to estimate the unknown parameters of the developed degradation model, the maximum likelihood estimation (MLE) method is combined with a genetic optimisation algorithm.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.