碳化硅和氮化镓外垂直光电导开关的特性比较

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Linglong Zeng;Langning Wang;Xinyue Niu;Fuyin Liu;Ting He;Yanran Gu;Muyu Yi;Jinmei Yao;Tao Xun;Hanwu Yang
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引用次数: 0

摘要

本文介绍了垂直外置光电导半导体开关(PCSS),并比较了轴向触发下掺V 4H-SiC和掺Fe GaN PCSS的初始特性,如暗电阻、光导率、功率输出和击穿行为。实验是在 532 nm 波长、mJ 级能量和 30 ns 脉宽的激光下进行的。光电导实验表明,在 1 mJ 至 5 mJ 的不同激光能量下,相同电场强度下 GaN PCSS 的光电转换效率是 4H-SiC PCSS 的 2.27 倍。4H-SiC PCSS 的暗态电阻为 10^{12} 美元\cm 的 4H-SiC PCSS 可以承受 8 kV(16 kV/mm)的偏置电压和 8 mJ 的激光能量,最大输出功率可达 428.7 kW,而 GaN PCSS 由于暗态电阻低和存在缺陷,只能承受 1 kV(2.9 kV/mm)的偏置电压。从击穿发生后的击穿图像中可以观察到 4H-SiC PCSS 的明显裂纹,而 GaN PCSS 的暗态电阻则从 $10^{6} 下降到 $10^{6} 。\cm 下降到 $10^{4} 。\cm 下降到 10^{4} cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches
Vertical extrinsic photoconductive semiconductor switches (PCSSs) are presented with initial characteristics comparison between V-doped 4H-SiC and Fe-doped GaN PCSS under axial triggering such as dark resistance, photoconductivity, power output, and breakdown behavior. Experiments are carried out under the 532-nm-wavelength laser with mJ-level energy and a pulse width of 30 ns. Photoconductive experiments show that the photoelectric conversion efficiency of GaN PCSS is 2.27 times higher than 4H-SiC PCSS with the same electric field strength under different laser energies from 1 mJ to 5 mJ. 4H-SiC PCSS with a dark-state resistance of $10^{12} \Omega \cdot $ cm can withstand a bias voltage of 8 kV (16 kV/mm) and laser energy of 8 mJ and the maximum output power is up to 428.7 kW, while that of GaN can only stand a bias voltage of 1 kV (2.9 kV/mm) because of low dark resistance and defect. Obvious cracks of 4H-SiC PCSS can be observed from the breakdown image after breakdown occurs, while the dark-state resistance of GaN PCSS drops from $10^{6} \Omega \cdot $ cm to $10^{4} \Omega \cdot $ cm under high DC voltage.
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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