通过超高剂量 C 和硅离子注入提高化学机械抛光的选择性

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-02-29 DOI:10.1109/JEDS.2024.3371455

S. Yuan;K. Omori;T. Yamaguchi;T. Ide;S. Muranaka;M. Inoue

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引用次数: 0

摘要

通过超高剂量离子注入对薄膜表面进行改性，首次成功提高了化学机械抛光（CMP）的选择性。植入离子改变了 SiO2 和 Si3N4 薄膜的 CMP 去除率（RR）。而多晶硅（poly-Si）薄膜则无论离子注入与否都没有变化。当 C+ 以 $3/times 10{^{{16}}$ 离子/cm2 的浓度植入 SiO2 时，RR 与未植入时相比降低了约 40%。然而，在二氧化硅和多晶硅薄膜中植入 1 （times 10{^{{16}}$ 离子/cm2 的 C+ 或 Si+ 后，并没有观察到明显的变化。当使用高剂量植入对薄膜进行改性时，关于 CMP 机制的新发现与 Borst 的 Langmuir-Hinshelwood 模型相悖。

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Enhancement of Selectivity for Chemical Mechanical Polishing by Ultra-High-Dose C and Si Ion Implantation

The selectivity of chemical mechanical polishing (CMP) is successfully enhanced due to the modification of the film surface by ultra-high-dose ion implantation for the first time. The removal rate (RR) of CMP for SiO2 and Si3N4 films was changed by implanted ions. On the other hand, polycrystalline silicon (poly-Si) films had no change regardless of ion implantation. When C+ is implanted at

$3\times 10{^{{16}}}$

ions/cm2 into SiO2, the RR decreases by about 40% compared with that without implantation. However, no significant change was observed after the implantation of C+ at

$1\times 10{^{{16}}}$

ions/cm2 or Si+ to SiO2 and poly-Si films. New findings about CMP mechanism that are against Borst’s Langmuir-Hinshelwood model have been made when the film is modified by using high-dose implantation.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.