通过阻断氟离子注入提高低温氮化镓欧姆触点的可制造性

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Tong Liu;Xiangdong Li;Zhanfei Han;Lili Zhai;Junbo Wang;Shuzhen You;Jincheng Zhang;Jie Zhang;Zhibo Cheng;Yuanhang Zhang;Qiushuang Li;Yue Hao
{"title":"通过阻断氟离子注入提高低温氮化镓欧姆触点的可制造性","authors":"Tong Liu;Xiangdong Li;Zhanfei Han;Lili Zhai;Junbo Wang;Shuzhen You;Jincheng Zhang;Jie Zhang;Zhibo Cheng;Yuanhang Zhang;Qiushuang Li;Yue Hao","doi":"10.1109/JEDS.2024.3366804","DOIUrl":null,"url":null,"abstract":"Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability of this contact has been puzzling the industry and academia for years. In this work, an overlooked factor, fluorine injection, is unambiguously verified to widely exist during dielectric etching and can easily destroy the low-temperature GaN Ohmic contact formation. The injection depth is confirmed to be over 30 nm with a fluorine peak concentration of 1023 at/cm3 in vicinity of the surface. Traditional method of partial AlGaN recessing with a pretty tiny processing window is proven unfriendly for production and vulnerable to the fluorine injection. Two methods to get rid of the fluorine are proposed. The first one is to over-etch the AlGaN barrier to the GaN channel to fully remove the fluorine ions. The second is to deposit an etch-stop blocking layer of Al2O3, which is also compatible with CMOS process.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10438851","citationCount":"0","resultStr":"{\"title\":\"Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection\",\"authors\":\"Tong Liu;Xiangdong Li;Zhanfei Han;Lili Zhai;Junbo Wang;Shuzhen You;Jincheng Zhang;Jie Zhang;Zhibo Cheng;Yuanhang Zhang;Qiushuang Li;Yue Hao\",\"doi\":\"10.1109/JEDS.2024.3366804\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability of this contact has been puzzling the industry and academia for years. In this work, an overlooked factor, fluorine injection, is unambiguously verified to widely exist during dielectric etching and can easily destroy the low-temperature GaN Ohmic contact formation. The injection depth is confirmed to be over 30 nm with a fluorine peak concentration of 1023 at/cm3 in vicinity of the surface. Traditional method of partial AlGaN recessing with a pretty tiny processing window is proven unfriendly for production and vulnerable to the fluorine injection. Two methods to get rid of the fluorine are proposed. The first one is to over-etch the AlGaN barrier to the GaN channel to fully remove the fluorine ions. The second is to deposit an etch-stop blocking layer of Al2O3, which is also compatible with CMOS process.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-02-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10438851\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10438851/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10438851/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

稳定与 CMOS 兼容的低温无金氮化镓欧姆触点是一项至关重要的工作,它决定着大规模生产中氮化镓功率 HEMT 的性能和产量。多年来,这种接触的不稳定性一直困扰着业界和学术界。在这项工作中,一个被忽视的因素--氟注入--被明确证实在介电刻蚀过程中广泛存在,并能轻易破坏低温氮化镓欧姆接触的形成。经证实,注入深度超过 30 nm,表面附近的氟峰值浓度为 1023 at/cm3。传统的氮化镓部分凹陷方法加工窗口非常小,对生产不友好,而且容易受到氟注入的影响。我们提出了两种去除氟的方法。第一种是在氮化镓沟道上过度蚀刻氮化镓势垒,以完全去除氟离子。第二种方法是沉积 Al2O3 蚀刻阻挡层,这也与 CMOS 工艺兼容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection
Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production. The instability of this contact has been puzzling the industry and academia for years. In this work, an overlooked factor, fluorine injection, is unambiguously verified to widely exist during dielectric etching and can easily destroy the low-temperature GaN Ohmic contact formation. The injection depth is confirmed to be over 30 nm with a fluorine peak concentration of 1023 at/cm3 in vicinity of the surface. Traditional method of partial AlGaN recessing with a pretty tiny processing window is proven unfriendly for production and vulnerable to the fluorine injection. Two methods to get rid of the fluorine are proposed. The first one is to over-etch the AlGaN barrier to the GaN channel to fully remove the fluorine ions. The second is to deposit an etch-stop blocking layer of Al2O3, which is also compatible with CMOS process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信