使用紫外 LED 的铁电 Hf0.5Zr0.5O2 电容器节能退火工艺，实现绿色制造

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-02-13 DOI:10.1109/JEDS.2024.3365150

Hirotaka Yamada;Satoru Furue;Takehiko Yokomori;Yuki Itoya;Takuya Saraya;Toshiro Hiramoto;Masaharu Kobayashi

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引用次数: 0

摘要

热退火过程对 Hf0.5Zr0.5O2 (HZO) 薄膜中铁电相的形成起着重要作用。本研究首次使用紫外线（UV）LED 演示了 HZO 电容器的退火过程。由于带有 TiN 电极的 HZO 薄膜在紫外区域的吸收率最高，紫外 LED 退火工艺有望实现比传统卤素灯 RTA 方法更节能的退火工艺。实验证实，与传统方法相比，紫外 LED 退火可减少近一半的能耗。该方法获得的铁电特性与卤素灯 RTA 工艺在 400-450°C 温度下获得的铁电特性相当。冰晶入射 X 射线衍射（GIXRD）图显示，没有形成单斜相，只确认了四方相和正方相。同时还证实，在紫外-发光二极管退火过程后，面内拉伸应力仍然存在，这是形成铁电正交相的必要条件。

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Energy-Efficient Annealing Process of Ferroelectric Hf0.5Zr0.5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing

Thermal annealing process plays an important role in the formation of ferroelectric phase in Hf0.5Zr0.5O2 (HZO) thin films. In this study, the annealing process of the HZO capacitors is demonstrated using ultraviolet (UV)-LED, for the first time. Since the absorptance of the HZO films with TiN electrodes is highest in UV region, the UV-LED annealing process is promising to achieve a much more energy-efficient annealing process than a conventional halogen lamp RTA method. It was experimentally confirmed that UV-LED annealing reduces the energy consumption by nearly half compared to the conventional method. The ferroelectric characteristics obtained by this method are comparable to those achieved by the halogen lamp RTA process at 400-450°C. Grazing incidence X-ray diffraction (GIXRD) pattern shows that no monoclinic phase is formed and only the tetragonal and orthorhombic phases are confirmed. It is also confirmed that there is the in-plane tensile stress remaining after the UV-LED annealing process, which is necessary for the formation of the ferroelectric orthorhombic phase.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.