基于 a-IGZO TFT 的跨导增强拓扑结构的性能优化型运算放大器

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-02-16 DOI:10.1109/JEDS.2024.3366554

Fanzhao Meng;Yi Li;Jun Li;Jie Liang;Jianhua Zhang

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引用次数: 0

摘要

本文报告了一种性能优化的运算放大器（OPAMP），它采用基于非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）的跨导增强拓扑结构。通过 N2O 等离子处理，TFT 的性能得到增强，从而呈现出适合于完成 OPAMP 的电气特性。电路由 19 个 TFT 组成，测量的相位差 (PM) 和单位增益频率 (UGF) 分别为 35.8° 和 200 kHz。直流功耗（PDC）为 0.68 mW。值得注意的是，它的电压增益（Av）高达 32.67 dB，带宽（BW）为 15 kHz（直流电源电压为 15 V）。目前还很少有报告称该产品具有如此高的增益和足够的带宽。该 OPAMP 在所有 a-IGZO 文献中表现出卓越的性能，为基于 TFT 的集成电路 (IC) 的未来发展提供了有力支持。

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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs

This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical characteristics suitable for accomplishing an OPAMP. The circuit consists of 19 TFTs with measured phase margin (PM) and unity-gain frequency (UGF) of 35.8° and 200 kHz, respectively. The DC power consumption (PDC) is 0.68 mW. Notably, it exhibits a high voltage gain (Av) of 32.67 dB and bandwidth (BW) of 15 kHz with 15 V DC supply voltage. Scarcely any work was reported with such a high gain while having a sufficient BW. The OPAMP demonstrates excellent performance among all a-IGZO literature and provides substantial support for the future development of TFT-based integrated circuits (ICs).

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.