利用 RIE 滞后现象设计快速响应背照式三维复合电极硅探测器

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-02-13 DOI:10.1109/JEDS.2024.3365732

Wenzheng Cheng;Manwen Liu;Chenchen Zhang;Daimo Li;Zhihua Li

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引用次数: 0

摘要

本文提出并模拟了一种背入射三维复合电极硅探测器（3DCESD）。电极结构包括 70% 的沟槽状特征和 30% 的柱状特征，利用博世工艺的 RIE 滞后现象，通过单一蚀刻步骤实现。3DCESD 器件的性能受结构参数 ${S}$ 的影响。我们使用 TCAD 进行了比较模拟。3DCESD 的整体电场和加权电势得到了显著优化。在 -50V 和 -5V 的偏置电压下，分别进行了 MIP 和连续脉冲激光实验。3DCESD 具有显著的优势，包括响应速度快、电荷收集效率高、不均匀性小和功耗低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of Fast Response Back-Illuminated 3-D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon

In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch process. The performance of the 3DCESD device is influenced by the structural parameter

${S}$

. Comparative simulations were conducted using TCAD. The overall electric field and weighting potential of 3DCESD are significantly optimized. MIP and continuous pulse laser were performed separately under bias voltages of –50V and –5V. The 3DCESD exhibits notable advantages, including rapid response speed, high charge collection efficiency, minimal inhomogeneity, and low power consumption.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.