{"title":"用于半导体制造的曲线标准单元设计","authors":"Ryoung-Han Kim;Soobin Hwang;Apoorva Oak;Yasser Shirazi;Hsinlan Chang;Kiho Yang;Gioele Mirabelli","doi":"10.1109/TSM.2024.3362900","DOIUrl":null,"url":null,"abstract":"Curvilinear design was applied to standard cell layout to improve electrical characteristics and reduce manufacturing costs. Its implementation was intelligently co-optimized with 1-D Manhattan shapes and photolithography process to preserve the standard cell area equivalent to that of 1-D Manhattan-only designs. B-spline curve representation was employed to realize the curvilinear design. Curvilinear pathfinding was carried out through the Voronoi diagram to find the optimum routing path, and the A* routing algorithm to determine the shortest path. In the curvilinear-designed standard cells, the majority of standard cells exhibited reduced total metal length, decreased number of vias, and eliminated the need for an extra metal layer when compared to 1-D Manhattan-only standard cell designs. Manufacturability of curvilinear designs was evaluated, and potential solutions are proposed in the context of design rule, design rules check (DRC) and optical proximity correction (OPC). DRC and OPC were carried out within the currently employed electronic design automation (EDA) tools to verify the curvilinear designs.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 2","pages":"152-159"},"PeriodicalIF":2.3000,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Curvilinear Standard Cell Design for Semiconductor Manufacturing\",\"authors\":\"Ryoung-Han Kim;Soobin Hwang;Apoorva Oak;Yasser Shirazi;Hsinlan Chang;Kiho Yang;Gioele Mirabelli\",\"doi\":\"10.1109/TSM.2024.3362900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Curvilinear design was applied to standard cell layout to improve electrical characteristics and reduce manufacturing costs. Its implementation was intelligently co-optimized with 1-D Manhattan shapes and photolithography process to preserve the standard cell area equivalent to that of 1-D Manhattan-only designs. B-spline curve representation was employed to realize the curvilinear design. Curvilinear pathfinding was carried out through the Voronoi diagram to find the optimum routing path, and the A* routing algorithm to determine the shortest path. In the curvilinear-designed standard cells, the majority of standard cells exhibited reduced total metal length, decreased number of vias, and eliminated the need for an extra metal layer when compared to 1-D Manhattan-only standard cell designs. Manufacturability of curvilinear designs was evaluated, and potential solutions are proposed in the context of design rule, design rules check (DRC) and optical proximity correction (OPC). DRC and OPC were carried out within the currently employed electronic design automation (EDA) tools to verify the curvilinear designs.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"37 2\",\"pages\":\"152-159\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-02-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10423300/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10423300/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Curvilinear Standard Cell Design for Semiconductor Manufacturing
Curvilinear design was applied to standard cell layout to improve electrical characteristics and reduce manufacturing costs. Its implementation was intelligently co-optimized with 1-D Manhattan shapes and photolithography process to preserve the standard cell area equivalent to that of 1-D Manhattan-only designs. B-spline curve representation was employed to realize the curvilinear design. Curvilinear pathfinding was carried out through the Voronoi diagram to find the optimum routing path, and the A* routing algorithm to determine the shortest path. In the curvilinear-designed standard cells, the majority of standard cells exhibited reduced total metal length, decreased number of vias, and eliminated the need for an extra metal layer when compared to 1-D Manhattan-only standard cell designs. Manufacturability of curvilinear designs was evaluated, and potential solutions are proposed in the context of design rule, design rules check (DRC) and optical proximity correction (OPC). DRC and OPC were carried out within the currently employed electronic design automation (EDA) tools to verify the curvilinear designs.
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.