A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode

Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics of the device with consideration of various physical effects in resistive switching processes, such as the temperature-dependent conductive filament (CF) evolution, tunneling between CF tip and electrode, graphene electrode oxidation, and self-heating effect. The equivalent thermal circuit (ETC) model is developed to capture the temperature response in RRAM. The influence of graphene electrode oxidation on the resistance of the device is taken into consideration. The compact model is verified by comparing the simulated characteristics of the set/reset process and forming process with other's published experimental data.