低频噪声表征正偏压对 β-Ga2O3 FinFET 中陷阱空间分布的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-02-15 DOI:10.1016/j.sse.2024.108882

Hagyoul Bae , Geon Bum Lee , Jaewook Yoo , Khwang-Sun Lee , Ja-Yun Ku , Kihyun Kim , Jungsik Kim , Peide D. Ye , Jun-Young Park , Yang-Kyu Choi

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引用次数: 0

摘要

研究了正偏压（PBS）条件下β-Ga2O3薄膜场效应晶体管的可靠性。该晶体管采用三栅极结构，栅极电介质为 Al2O3。通过表征低频噪声（LFN），定量提取了栅极电介质中陷阱的空间分布。由于沟道载流子在栅极电介质中的捕获和去捕获，测得的功率谱密度（PSD）呈 1/f 形。值得注意的是，垂直于 β-Ga2O3 和 Al2O3 界面的阱的垂直分布图被绘制为

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Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET

The reliability of a β-Ga₂O₃ thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al₂O₃. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of β-Ga₂O₃ and Al₂O₃ was mapped

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.