Hagyoul Bae , Geon Bum Lee , Jaewook Yoo , Khwang-Sun Lee , Ja-Yun Ku , Kihyun Kim , Jungsik Kim , Peide D. Ye , Jun-Young Park , Yang-Kyu Choi
{"title":"低频噪声表征正偏压对 β-Ga2O3 FinFET 中陷阱空间分布的影响","authors":"Hagyoul Bae , Geon Bum Lee , Jaewook Yoo , Khwang-Sun Lee , Ja-Yun Ku , Kihyun Kim , Jungsik Kim , Peide D. Ye , Jun-Young Park , Yang-Kyu Choi","doi":"10.1016/j.sse.2024.108882","DOIUrl":null,"url":null,"abstract":"<div><p>The reliability of a <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al<sub>2</sub>O<sub>3</sub>. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub> was mapped</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"215 ","pages":"Article 108882"},"PeriodicalIF":1.4000,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET\",\"authors\":\"Hagyoul Bae , Geon Bum Lee , Jaewook Yoo , Khwang-Sun Lee , Ja-Yun Ku , Kihyun Kim , Jungsik Kim , Peide D. Ye , Jun-Young Park , Yang-Kyu Choi\",\"doi\":\"10.1016/j.sse.2024.108882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The reliability of a <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al<sub>2</sub>O<sub>3</sub>. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub> was mapped</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"215 \",\"pages\":\"Article 108882\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000315\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000315","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of β-Ga2O3 and Al2O3 was mapped
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.