勘误：设计一个伪态 0.15 µm рHEMT AlGaAs/InGaAs/GaAs 晶体管的非线性模型

Q4 Engineering

Russian Microelectronics Pub Date : 2024-02-08 DOI:10.1134/s1063739723900043

D. Tsunvaza, R. V. Ryzhuk, I. S. Vasil’evskii, N. I. Kargin, V. A. Klokov

引用次数: 0

摘要

本文的勘误已发表： https://doi.org/10.1134/S1063739723900043

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor

An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900043

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.