基于施密特触发器的低功耗 CMOS 电路的设计与评估

Q4 Engineering
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引用次数: 0

摘要

摘要 由于需要能产生无尖峰信号的高速、低功耗方波发生器,因此设计了施密特触发器电路。基于 BJT 或 FET 的电路设计存在一些缺点,如无法抑制输出信号中的尖峰、需要对输出信号进行增益控制、封装密度低、功耗大等。这为基于 CMOS 的设计的发展铺平了道路。进一步的低功耗要求使得基于 CMOS 的施密特触发器电路的低功耗设计成为可能。设计在 DSCH 和 Microwind 工具中建模,用于 90、65、45、32 和 22 纳米等不同技术的原理图和布局开发。选用的设计包括基本施密特触发器电路、基于动态 CMOS 逻辑的施密特触发器电路、基于伪 NMOS 的施密特触发器电路、基于弱 PMOS 多米诺的施密特触发器电路、基于 NORA 逻辑的施密特触发器电路、基于漏电控制晶体管(LECTOR)的施密特触发器电路、基于门控漏电晶体管(GALEOR)的施密特触发器电路和基于前馈漏电自抑制逻辑(FFLSSL)的施密特触发器电路。基于伪 NMOS 的施密特触发电路使用的晶体管数量最少,而基于 NORA 逻辑的施密特触发电路使用的晶体管数量最多。不过,伪 NMOS 仍然需要比率逻辑,这是一个很大的缺点。基于伪 NMOS 逻辑的施密特触发器电路占地面积非常小,至少为 27.027%。基于 FFLSSL 的施密特触发器电路的功耗至少降低了 75%。基于 FFLSSL 的施密特触发器电路的延迟至少减少了 10.15%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Evaluation of Low Power CMOS Based Schmitt Trigger Circuits

Abstract

The requirement of high speed low power square wave generators that yield spike free signal enabled the design of Schmitt trigger circuit. The designs BJT or FET based circuits have disadvantages like spikes in output signal cannot be suppressed, the output signal gain control is required, low packing density, considerable power dissipation, etc. This has paved way to development of CMOS based design. Further low power requirement enabled the CMOS based low power design aspects for the Schmitt trigger circuit. The designs are modeled in DSCH and Microwind tools for schematic and layout development at various technologies like 90, 65, 45, 32 and 22 nm. The choice of designs used are basic Schmitt trigger circuit, dynamic CMOS logic based Schmitt trigger circuit, pseudo NMOS based Schmitt trigger circuit, weak PMOS domino based Schmitt trigger circuit, NORA logic based Schmitt trigger circuit, leakage control transistor (LECTOR) based Schmitt trigger circuit, GALEOR (gated leakage transistor) based Schmitt trigger circuit and feed-forward leakage self-suppression logic (FFLSSL) based Schmitt trigger circuit. While the least number of transistors used are in the pseudo NMOS based Schmitt trigger circuit and highest number of transistors are used in NORA logic based Schmitt trigger circuit. Still pseudo NMOS requires ratioed logic which is a measure drawback. The pseudo NMOS logic based Schmitt trigger circuit occupies very less area by at least 27.027%. The power dissipation is very less in FFLSSL based Schmitt Trigger circuit by at least 75%. The delay is less in FFLSSL based Schmitt trigger circuit by at least 10.15%.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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