基于 50-Ω 噪声测量的 InP HEMT 噪声参数确定改进方法

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-01-31 DOI:10.1109/JEDS.2024.3360461

Yuanting Lyu;Zhichun Li;Ao Zhang;Jianjun Gao

{"title":"基于 50-Ω 噪声测量的 InP HEMT 噪声参数确定改进方法","authors":"Yuanting Lyu;Zhichun Li;Ao Zhang;Jianjun Gao","doi":"10.1109/JEDS.2024.3360461","DOIUrl":null,"url":null,"abstract":"In this paper, we propose an improved method for extracting the four noise parameters of InP HEMT devices based on a 50-\n<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>\n noise measurement system. The noise equivalent circuit and noise correlation matrix technique is combined with 50-\n<inline-formula> <tex-math>$\\Omega $ </tex-math></inline-formula>\n noise measurement to determine the noise parameters. This method eliminates expensive tuners and obtains accurate initial parameter values. The reduction in the fitting factors that need to be optimized simplifies the optimization process of traditional methods. High consistency between measured and modeled noise parameters up to 50 GHz for InP HEMT with 70 nm gatelength and \n<inline-formula> <tex-math>$2\\times 50\\,\\,\\mu \\text{m}$ </tex-math></inline-formula>\n gatewidth are given by this method. These are providing a simple and fast way for the measurement process of noise parameters.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"113-120"},"PeriodicalIF":2.0000,"publicationDate":"2024-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10418161","citationCount":"0","resultStr":"{\"title\":\"An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements\",\"authors\":\"Yuanting Lyu;Zhichun Li;Ao Zhang;Jianjun Gao\",\"doi\":\"10.1109/JEDS.2024.3360461\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose an improved method for extracting the four noise parameters of InP HEMT devices based on a 50-\\n<inline-formula> <tex-math>$\\\\Omega $ </tex-math></inline-formula>\\n noise measurement system. The noise equivalent circuit and noise correlation matrix technique is combined with 50-\\n<inline-formula> <tex-math>$\\\\Omega $ </tex-math></inline-formula>\\n noise measurement to determine the noise parameters. This method eliminates expensive tuners and obtains accurate initial parameter values. The reduction in the fitting factors that need to be optimized simplifies the optimization process of traditional methods. High consistency between measured and modeled noise parameters up to 50 GHz for InP HEMT with 70 nm gatelength and \\n<inline-formula> <tex-math>$2\\\\times 50\\\\,\\\\,\\\\mu \\\\text{m}$ </tex-math></inline-formula>\\n gatewidth are given by this method. These are providing a simple and fast way for the measurement process of noise parameters.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"12 \",\"pages\":\"113-120\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10418161\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10418161/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10418161/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种基于 50- $\Omega $ 噪声测量系统提取 InP HEMT 器件四个噪声参数的改进方法。噪声等效电路和噪声相关矩阵技术与 50-Ω 噪声测量相结合来确定噪声参数。这种方法省去了昂贵的调谐器，并能获得精确的初始参数值。减少了需要优化的拟合因子，简化了传统方法的优化过程。对于具有 70 nm 栅极长度和 $2\times 50\,\,\mu \text{m}$ 栅极宽度的 InP HEMT，该方法给出了高达 50 GHz 的测量噪声参数和建模噪声参数之间的高度一致性。这些都为噪声参数的测量过程提供了一种简单而快速的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements

In this paper, we propose an improved method for extracting the four noise parameters of InP HEMT devices based on a 50-

$\Omega $

noise measurement system. The noise equivalent circuit and noise correlation matrix technique is combined with 50-

$\Omega $

noise measurement to determine the noise parameters. This method eliminates expensive tuners and obtains accurate initial parameter values. The reduction in the fitting factors that need to be optimized simplifies the optimization process of traditional methods. High consistency between measured and modeled noise parameters up to 50 GHz for InP HEMT with 70 nm gatelength and

$2\times 50\,\,\mu \text{m}$

gatewidth are given by this method. These are providing a simple and fast way for the measurement process of noise parameters.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.