带内 P1dB 为 31 dBm 的自举式 250-nm GaN MMIC N-Path 滤波器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-01-24 DOI:10.1109/LSSC.2024.3358083

Netanel Desta;Emanuel Cohen

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引用次数: 0

摘要

这项研究提出了一种二阶并行 N 路径带通滤波器，它采用 250 纳米耗尽型氮化镓工艺，利用集成基带自举技术实现了高带内线性度性能。自举电路通过防止 GaN 开关的栅寄生二极管打开，将带内压缩率提高了 20 dB。该滤波器在 1 GHz 中心频率附近的 26 MHz 带宽内实现了 31 dBm 的带内 P1dB，在 0.3-1.8 GHz 之间的插入损耗为 2 dB，带外抑制为 16 dB。芯片占地面积为 9.2 平方毫米，功耗为 4.9 瓦。

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A Bootstrapped 250-nm GaN MMIC N-Path Filter With a 31 dBm In-Band P1dB

This work presents a second-order parallel N-path bandpass filter implemented in 250-nm depletion-mode GaN process leveraging an integrated baseband bootstrapping technique for high-in-band linearity performance. The bootstrap circuit improves in-band compression by 20 dB by preventing the opening of the gate parasitic diode of the GaN switch. The filter achieves in-band P1dB of 31 dBm for a 26-MHz bandwidth around 1-GHz center frequency along with 2-dB insertion loss between 0.3-1.8 GHz with an out-of-band rejection of 16 dB. The chip occupies an area of 9.2 mm2 and consumes 4.9 Watt.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量